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宽禁带半导体SiC紫外光电探测器研究进展 被引量:1

Research progress of wide band gap semiconductor SiC ultraviolet photodetectors
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摘要 紫外光电探测器在天气监测、火灾告警、空间探测、细胞检测以及紫外辐射测量方面有着广泛的应用,具有重要的研究价值.宽带隙半导体碳化硅(SiC)天然具有紫外波段的探测优势.近年来,随着SiC材料与器件技术的不断突破,全球诸多研究小组利用SiC研制出各种高性能紫外光电探测器.本文围绕4种典型结构的SiC紫外探测器,从新结构、新工艺、新材料几个方面总结回顾过去几十年国内外及厦门大学SiC课题组的研究历程与进展,分析目前SiC探测器研究所面临的问题与挑战,并提出相应的解决方案,阐明SiC紫外探测器未来发展的趋势以及重要的应用领域. Ultraviolet(UV)photodetectors are widely used in weather monitoring,fire alarm,space detection,cell detection and ultraviolet radiation measurements,which secure important research values.Naturally,wide band-gap semiconductor silicon carbide(SiC)enjoys the detection advantage in the ultraviolet wavelength.In recent years,with the continuous breakthrough of SiC materials and device technology,various research groups around the world have developed various high-performance ultraviolet photodetectors by using SiC.In this paper,focusing on four typical structures of SiC ultraviolet detectors,we review the research process and progress from new structure,new processes and new materials of SiC research groups around the world and Xiamen University in the past decades,analyze problems and challenges faced by current SiC detector research,propose corresponding solutions,and clarify the future development trend and important application fields of SiC ultraviolet detectors.
作者 张峰 付钊 张泽阳 李子豪 吴正云 ZHANG Feng;FU Zhao;ZHANG Zeyang;LI Zihao;WU Zhengyun(College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)
出处 《厦门大学学报(自然科学版)》 CAS CSCD 北大核心 2023年第2期254-268,共15页 Journal of Xiamen University:Natural Science
基金 国家自然科学基金(62274137) 福建省杰出青年科学基金(2020J06002) 江西省杰出青年科学基金(S2021QNZD2L0013)。
关键词 光电流 响应度 量子效率 探测率 photocurrent responsivity quantum efficiency detectivity
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  • 1Morkoc H,Strite S,Gao G B, et al.Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device tech- nologies. Journal of Applied Physics . 1994 被引量:1
  • 2Monroy E,Omnes F,Calle F.Wide-bandgap semiconductor ultraviolet photodetectors. Semiconductor Science and Technology . 2003 被引量:1
  • 3Anikin M M,Andreev A N,Pyatko S N, et al.UV photodetectors in 6H-SiC. Sensors and Actuators A Physical . 1992 被引量:1
  • 4Edmond J A,Kong H S,Carter C H.Blue LED’s, UV photodiodes and high-temperature rectifiers in 6H-SiC. Physica B Condensed Matter . 1993 被引量:1
  • 5Hirabayashi Y,Karasawa S,Kobayashi K, et al.Spectral response of a photodiode using 3C-SiC single crystalline film. Sensors and Actuators A Physical . 1994 被引量:1
  • 6Hirabashi Y,Misawa S,Yoshida S.The effect of atmospheric and HIP annealing on spectral response of 3C-SiC pn photo- diode. Institute of Physics Conference Series . 1996 被引量:1
  • 7Hurm V,Bronner V,Benz W, et al.Large area MSM photodiode array for 0.85 μm wavelength 10 Gbit/s per channel parallel optical links. Electronics Letters . 2002 被引量:1
  • 8Kim K C,Sung Y M,Lee I H, et al.Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays. J Vacuum Sci Technol A: Vacuum Surf Films . 2006 被引量:1
  • 9Sciuto A,Roccaforte F,Franco S D, et al.High efficiency 4H-SiC Schottky UV photodiodes using self-aligned semitrans- parent contacts. Superlattices and Microstructures . 2007 被引量:1
  • 10Yang W F,Yang K Q,Chen X P, et al.Study of annealing effect on Cu/, Ni/4H-SiC Schottky barrier. Chinese Journal of Semiconductors . 2005 被引量:1

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