摘要
目前,常见商用宽禁带碳化硅金属-氧化物场效应晶体管(SiC MOSFETs)的阻断电压不超过1.7kV,为提高其等效耐压等级,提出一种二极管-电容混合钳位的间接串联拓扑和准两电平开环调制方法,可实现拓扑中串联器件的电压自动均衡。基于此,该文利用SiC MOSFET裸芯片封装制作了一个3.6kV/20A的间接串联功率模块,并设计出与之配套的驱动保护电路,整体等效为通用中压、两电平功率模块,具有体积小、集成度高的优点。最后通过实验验证了该模块的通用性,以及其在开关损耗和经济性等方面的优势。
Nowadays,the blocking voltage of common commercial wide band gap silicon carbide metal oxide field effect transistors(SiC MOSFETs)is less than 1.7kV.In order to improve its equivalent withstanding voltage,an indirect series-connected method based on diode-capacitor hybrid clamping topology is proposed in this paper.And a quasi two-level open-loop modulation method is designed to realize the automatic voltage self-balance.With this indirect series-connected method,a 3.6kV/20A power module was fabricated using SiC MOSFET bare dies.Moreover,a gate driver circuit with overcurrent protection was designed.Along with the gate driver,the whole power module was equivalent to a general-purpose medium-voltage two-level power module with small size and high integration.Finally,the experimental results verified the universality of the power module and also showed its advantages in switching loss and economy.
作者
刘基业
郑泽东
李驰
王奎
李永东
Liu Jiye;Zheng Zedong;Li Chi;Wang Kui;Li Yongdong(State Key Lab of Control and Simulation of Power System and Generation Equipments Tsinghua University,Beijing 100084 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2023年第7期1900-1909,共10页
Transactions of China Electrotechnical Society
基金
国家自然科学基金(U2106217)
船舶综合电力技术重点实验室(6142217200403)资助项目。
