摘要
对4500 V/2000 A StakPak IGBT器件组成的半桥子模块开展了动态参数测试,测试电压和电流达到2700 V和2500 A,瞬态电流峰值接近3800 A。利用测试数据对动态过程电流变化影响因素进行了分析,发现关断电流下降过程主要受续流二极管(FWD)正向特性影响,关断电流下降及关断电压过冲基本不受测试电压变化影响。但测试电压影响pnp晶体管放大倍数及开通过程电流波形。开通电流上升过程波形可近似采用二次函数与一次函数分段描述。子模块寄生电感计算值受选取时间段的影响,在开通电流上升过程初始阶段进行回路寄生电感计算误差相对较小,子模块回路寄生电感值约为90 nH。
The dynamic parameter test was carried out on the half-bridge sub-module composed of 4500 V/2000 A StakPak IGBTs,the test voltage and current reached 2700 V and 2500 A,and the peak transient current was close to 3800 A.The influencing factors of current change in dynamic process were analyzed by using test data.It is found that the turn-off current drop process is mainly affected by the forward characteristic of freewheeling diode(FWD),and the turn-off current drop and turn-off voltage overshoot are basically unaffected by the test voltage.But the test voltage affects the pnp transistor magnification and the current waveform during turn-on process.The waveform of the turn-on current rising process can be approximately described by a quadratic function and a first-order function in sections.The calculation value of the parasitic inductance of the sub-module is affected by the selected time period.The initial stage of turn-on current rising process is most suitable for the loop parasitic inductance calculation,in which the calculation error is relatively small,and the parasitic inductance of the sub-module loop is about 90 nH.
作者
袁文迁
胡应宏
宋鹏
季一润
袁茜
槐青
Yuan Wenqian;Hu Yinghong;Song Peng;Ji Yirun;Yuan Xi;Huai Qing(State Grid Jibei Electric Power Research Institute,Beijing 100045,China;Key Laboratory of Operation and Maintenance Technology of VSC-HVDC Transmission System State Grid Jibei Electric Power Company Limited,Beijing 100045,China)
出处
《半导体技术》
CAS
北大核心
2022年第12期999-1008,共10页
Semiconductor Technology
基金
国家电网有限公司总部科技项目(5500-202114133A-0-0-00)。
关键词
半桥子模块
动态特性
开关损耗
寄生电感
电流上升过程
电流下降过程
half-bridge sub-module
dynamic characteristic
switching loss
parasitic inductance
current rise process
current drop process
