摘要
A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.
作者
刘晓宇
张勇
王皓冉
魏浩淼
周静涛
金智
徐跃杭
延波
Xiaoyu Liu;Yong Zhang;Haoran Wang;Haomiao Wei;Jingtao Zhou;Zhi Jin;Yuehang Xu;Bo Yan(University of Electronic Science and Technology of China,Chengdu 611731,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China)
基金
Project supported by the National Natural Science Foundation of China (Grant No.61871072)。
