摘要
Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes.
基金
supported by the National Undergraduate Innovation and Entrepreneurship Training Program(No.201910060034)
the Science and Technology Development Fund Program of Universities of Tianjin(No.2017KJ250)
the Key Program of Tianjin Science and Technology Development Plan(No.18YFYSZC00180)
the Tianjin Natural Science Foundation(Nos.18JCQNJC72700 and 18JCZDJC99800)
the Tianjin Science and Technology Foundation(No.17ZXZNGX00090).
