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IGBT的研究与进展 被引量:1

Technology Research Status and Progresses of IGBT
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摘要 本文介绍了现代硅基核心功率半导体器件IGBT的历史演变和新型器件结构的研究进展,阐述了该器件在轨道交通、直流输电和新能源汽车等领域的研发进展和应用现状;最后讨论了IGBT技术面临的技术挑战和发展趋势。 The evolution of modern Si based IGBT and recent progress of novel device structures.The development and application status of IGBT devices for rail transportation,DC transmission and new energy vehicles were introduced.Finally,the technology challenges and development trends of IGBT technology were discussed.
作者 陈利 CHEN Li(Fujian Jinrun Semiconductor Technology Co.,Ltd.)
出处 《中国集成电路》 2022年第12期13-23,28,共12页 China lntegrated Circuit
关键词 功率半导体器件 硅材料 绝缘栅双极晶体管 碳化硅 power semiconductor device Si material IGBT SiC
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