期刊文献+

高精度MEMS硅微陀螺仪正交误差设计 被引量:1

Quadrature Error Design of High-Precision MEMS Silicon Microgyroscope
下载PDF
导出
摘要 正交误差是影响振动式硅微陀螺仪测量精度的主要因素之一,设计并制备了一种具有正交误差校正功能的高精度振动式微电子机械系统(MEMS)硅微陀螺仪。阐述了振动式硅微陀螺仪的工作原理,分析了正交误差产生的机理,并介绍了正交误差对陀螺仪测量精度的影响。为了进一步提升陀螺仪的测量精度,利用直流负刚度校正法对陀螺仪正交误差进行了校正,并通过有限元仿真确定了高精度陀螺仪敏感结构的最优参数。利用圆片级真空封装技术和绝缘体上硅(SOI)工艺实现了高精度陀螺仪敏感结构芯片的制备,采用高密度LCC20陶瓷管壳实现了高精度陀螺仪的集成封装。陀螺仪封装后,整体尺寸为9.0 mm×9.0 mm×2.8 mm。测试了陀螺仪的性能参数。测试结果表明,陀螺仪量程为±500°/s,零偏不稳定性为1.052°/h,零偏为0.004°/s,能够满足陀螺仪大部分中低精度应用需求。 Quadrature error is one of the main factors to affect the measuring precision of the vibratory silicon microgyroscope. A high-precision vibratory micro-electromechanical system(MEMS) silicon microgyroscope with quadrature error correction function was designed and prepared. The working principle of the vibratory silicon microgyroscope was described, the mechanism of the quadrature error was analyzed, and the influence of the quadrature error on the measuring precision of the gyroscope was introduced. Then, To improve the measuring precision of the gyroscope, the DC negative stiffness correction method was applied to correct the quadrature error of the gyroscope, and the optimal parameters of the sensitive structure of the high-precision gyroscope were confirmed through finite element simulation. The high-precision gyroscope sensitive structure chip was prepared by wafer level vacuum packaging technology and silicon-on-insulator(SOI) process. The integrated package of the gyroscope was realized with the LCC20 ceramic shell. The overall size of the gyroscope after packaging is 9.0 mm×9.0 mm×2.8 mm. The performance parameters of the gyroscope were measured. The test result shows that the range of the gyroscope is ±500°/s, the bias instability is 1.052°/h, the bias is 0.004°/s, which can meet the requirements of gyroscopes in most medium and low precision applications.
作者 董晓亮 张志勇 杨拥军 Dong Xiaoliang;Zhang Zhiyong;Yang Yongjun(The 13^(th)Research Institute,China Electronics Technology Corporation,Shijiazhang 050051,China)
出处 《微纳电子技术》 CAS 北大核心 2022年第8期795-800,830,共7页 Micronanoelectronic Technology
关键词 微电子机械系统(MEMS) 硅微陀螺仪 正交误差 有限元仿真 真空封装 绝缘体上硅(SOI) micro-electromechanical system(MEMS) silicon microgyroscope quadrature error finite element simulation vacuum packaging silicon-on-insulator(SOI)
  • 相关文献

参考文献4

二级参考文献47

  • 1许宜申,王寿荣,吉训生,盛平.微机械振动陀螺仪正交误差分析[J].仪器仪表学报,2006,27(z1):105-107. 被引量:12
  • 2施芹,裘安萍,苏岩,朱欣华.硅微陀螺仪的误差分析[J].传感技术学报,2006,19(05B):2182-2185. 被引量:13
  • 3杨波,周百令.双框架式硅微陀螺仪正交信号分析[J].传感技术学报,2007,20(1):84-87. 被引量:3
  • 4HSU T R. MEMS and microsystems-design and manufacture [M]. Boston:Mcgraw-Hill, 2002. 被引量:1
  • 5BARRON C C, COMTOIS J H, MICHALICEK M A. Electrothermal actuators fabricated in four-level planarized surface mieromachined polycrystalline silicon [J]. Sensors and Actuators: A, 1998, 70 (1/2): 23-31. 被引量:1
  • 6BALTES H, BRAND O. CMOS-based microsensors and packaging [J]. Sens Actuator: A, 200I, 92 (1/2/3): 1-9. 被引量:1
  • 7PREMACHANDRAN C S, MOHANRAJ R N S, CHONG SER CHOONG IYER M K. A vertical wafer level packaging using through hole filled via by liftoff polymer method for MEMS and 3D stack application [C] // Proceeding of 55^th ECTC. Las Vegas, USA, 2005: 1094- 1098. 被引量:1
  • 8WAGNER M. Method for creating low cost 3D MEMS chemical sensors by using through wafer via and wafer bonding [C] // Proceeding of 57^th ECTC. Reno, NV, USA, 2007: 1119- 1126. 被引量:1
  • 9GOOCH R. Wafer level vacuum packaging for MEMS [J]. Journal of Vacuum Science and Technology: A, 1999, 17 (4) : 2295 - 2299. 被引量:1
  • 10GILLEO K.MEMS/MOEMS封装技术[M].北京;化学工业出版社,2008. 被引量:1

共引文献61

同被引文献8

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部