摘要
随着半导体器件行业对单晶硅片尤其是超薄单晶硅片的需求愈来愈大,单晶硅的制备工艺及品质表征愈发受到研究人员的关注。残余应力作为影响单晶硅片品质的重要指标,缺乏合适的表征方法和设备。基于显微拉曼光谱技术,建立单晶硅片相对应力表征方法。对不同样品进行了微区相对应力表征分析,结果表明:针对明显光学缺陷的样品,拉曼表征结果与显微光学成像相对一致。针对显微光学无明显缺陷的样品,基于拉曼光谱技术相对应力表征方法可作为显微光学表征的补充手段。该方法可为单晶硅片的加工工艺改进和提高质量控制提供判断依据。
With the increasing demand for monocrystalline silicon in the semiconductor device industry,especially ultra-thin monocrystalline silicon,the preparation process and quality characterization of monocrystalline silicon have attracted more and more attention of researchers.Residual stress,as an important index affecting the quality of monocrystalline silicon wafer,it is lack of appropriate characterization methods and equipment.Based on micro Raman spectroscopy,a method for characterizing the relative stress of monocrystalline silicon wafer is established in this paper.The results show that for the samples with obvious optical defects,the Raman characterization results are relatively consistent with the micro optical imaging.For the samples without obvious micro optical defects,the relative stress characterization method based on Raman spectroscopy can be used as a supplementary means of micro optical characterization.This method can provide judgment basis for the improvement of processing technology and quality control of monocrystalline silicon wafer.
作者
史宏伟
崔飞鹏
李晓鹏
赵迎
SHI Hongwei;CUI Feipeng;LI Xiaopeng;ZHAO Ying(NCS Testing Technology Co.,Ltd.,Beijing 10081,China)
出处
《金属功能材料》
CAS
2022年第4期37-42,共6页
Metallic Functional Materials
基金
国家重点研发计划项目(重大科学仪器设备专项2018YFF01012000)。
关键词
显微拉曼光谱
单晶硅
应力
micro Raman spectroscopy
monocrystalline silicon
stress
