摘要
红外透明导电薄膜是指同时具有高红外透射率和高电导率的功能薄膜材料,其在电磁屏蔽涂层、红外光电探测器、人体红外治疗、红外发光二极管等领域有重要应用。尽管研究者已经报道了许多关于透明导电膜的综述,但是以往研究者主要关注可见光波段的透明导电,忽视了红外波段透明导电研究的系统总结和评述。本综述主要关注了N型金属氧化物和非氧化物以及P型金属氧化物、硫化物和卤化物。首先依据德鲁德自由电子理论模型分析了金属化合物红外透明性能与导电性能难以兼容的物理起源,然后归纳总结了金属化合物的制备、结构和光电性质,揭示了现有N型金属化合物普遍存在导电性高但红外透射率低的问题,P型金属化合物普遍存在红外透射率高但导电性低的问题。针对这些性能方面的瓶颈问题,讨论了薄膜制备、缺陷控制、能带化学调制以及新材料设计等方面的改性思路和可行性方法。最后展望了金属化合物未来发展方向以及仍需解决的难题,以期为设计和制备高性能的红外透明导电薄膜提供参考。
Infrared transparent conductive film(ITCF)refers to the functional material with high infrared transmittance and high conductivity.As key material,ITCF has been widely used in various fields,such as electromagnetic shielding coating,infrared photodetector,infrared therapy and infrared light emitting diode.Although many reviews of transparent conductive films have been reported,most investigations are focusing on visible band,the systematic summary and review of the research on infrared band are neglected.In addition,the synergistic strategies and material design of large free carrier reflection edge(λ_(p))and high conductivity(σ)have not been well explored.In this review,we mainly review the research progress of N-type metal oxides and non-oxides,and P-type metal oxides,sulfides,and halides.First,based on the Drude free-electron model,the physical origin of the incompatibility between the infrared transparency and the conduction of metal compounds is analyzed.A greatλ_(p) requires a great effective mass(m*)and a small carrier concentration(n),and a highσrequires a small m*and a great n.Therefore,there is a trade-off between highλ_(p) and highσ.In the future,it is still an important challenge to coordinate the contradiction between the infrared transparency and conduction.Then,the progress on the preparation,structure and photoelectric properties of metal compounds are summarized.The existing N-type metal compounds generally have the problem of high conductivity but low infrared transmittance and P-type metal compounds generally have the problem of high infrared transmittance but low conductivity are revealed.Address these performance bottlenecks,the modification ideas and feasible methods are discussed,such as film preparation,defect control,Chemical Modulation of the Valence Band and new material design.For N-type compounds,researchers generally believe that increasing the mobility while controlling the carrier concentration in a moderate range to suppress carrier reflection is the best strategy.According
作者
顾志清
崔灿
丁泉茗
于成龙
朱嘉琦
胡超权
GU Zhi-qing;CUI Can;DING Quan-ming;YU Cheng-long;ZHU Jia-qi;HU Chao-quan(College of Information Science and Engineering,Jiaxing University,Zhejiang Jiaxing 314001,China;School of Materials Science and Engineering,Jilin University,Changchun 130012,China;School of Materials Science and Engineering,Changchun University of Science and Technology,Changchun 130022,China;National Key Laboratory of Special Environment of Composite Technology,Harbin Institute of Technology,Harbin 150001,China)
出处
《表面技术》
EI
CAS
CSCD
北大核心
2022年第8期71-93,134,共24页
Surface Technology
基金
国家自然科学基金(52032004,52002150)
浙江省自然科学基金(LQ19E020003)
嘉兴市科技局项目(2019AY11010)
浙江省教育厅一般科研项目(Y201840400)
嘉兴学院学生创新培养项目(202110354051)。
关键词
红外透明
导电
薄膜
金属化合物
载流子浓度
迁移率
infrared transparent
conductive
films
metal compounds
carrier concentration
mobility
