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基于GaAs工艺的2~6GHz高效率收发多功能芯片设计

Design on GaAs-Based 2~6GHz High-efficiency Transmit/Receive Multi-function Chip
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摘要 阐述一款基于GaAsp HEMT的2~6GHz收发多功能芯片的设计,该芯片集成了收发切换开关、接收低噪声放大器和发射功率放大器,具有高集成、低噪声、高增益、高输出功率和附加效率的特点。测试结果显示,在2~6GHz,接收通道增益25dB,噪声系数小于2.5dB,输出P1dB功率13.5dBm,电流小于50mA;发射通道增益大于28dB,饱和输出功率大于23.5dBm,功率附加效率24%~38%,电流小于230mA。芯片尺寸为:3.0mm×2.2mm。 This paper designed a GaAs-based 2~6GHz Transmit/Receive Multi-function Chip. This chip integrated the transmit/receive switch, the receiving low noise amplifier and the transmitting power amplifier, which has high integration, low noise, high gain, high output power and high poweradded efficiency. The measurement shows that, at 2~6GHz,in the receive channel, the gain is 25dB, the NF less than 2.5dB, output P1dB power is 13.5dBm, the current less than 50mA;in the transmit channel, the gain over 28dB, the saturated output power over 23.5dBm, the power-added efficiency is 24%~38%, the current less than 230mA. The chip size is 3.0mm×2.2mm.
作者 王为 袁野 廖学介 滑育楠 WANG Wei;YUAN Ye;LIAO Xuejie;HUA Yunan(Chengdu Ganide Technology,Chengdu,610041,China)
出处 《集成电路应用》 2022年第6期17-19,共3页 Application of IC
关键词 集成电路设计 GaAs pHEMT 多功能芯片 低噪声 高效率 MMIC integrated circuit design GaAs pHEMT multi-function chip low noise high-efficiency MMIC
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