摘要
硫化亚锗(GeSe)具有合适的禁带宽度、高的吸收系数和高的载流子迁移率等优异的光电特性,且组分简单、低毒和储量丰富,特别适合作为光伏吸收材料。本文基于新型太阳电池吸收层材料GeSe构筑了结构为金属栅线/AZO/i-ZnO/CdS/GeSe/Mo/玻璃的薄膜太阳电池,分别模拟分析了缓冲层和吸收层的厚度、掺杂浓度,以及吸收层体缺陷密度对器件性能的影响。经过优化CdS缓冲层厚度和掺杂浓度以及GeSe吸收层厚度和掺杂浓度,器件获得高达27.59%的转换效率。这些结果表明GeSe基薄膜太阳电池有成为高效光伏器件的潜力。
Germanium monoselenide(GeSe)has been considered to be a promising photovoltaic absorber material due to its excellent photoelectric properties such as suitable band gap,high absorption coefficient and high carrier mobility.In this paper,the thin film solar cells with the proposed structure of metal grid/AZO/i-ZnO/CdS/GeSe/Mo/glass were simulated.The solar cells output performance parameters were investigated and evaluated in response to changes in materials properties of functional layers(such as thickness,carrier concentration and bulk defect density).After optimizing the thickness and doping concentration of CdS buffer layer and GeSe absorber layer,respectively,the solar cells show a conversion efficiency of 27.59%.Finally,the effect of bulk defect density in the absorber layer on the device performance was simulated.These results show that GeSe based thin film solar cells have the potential to become a high efficiency photovoltaic device.
作者
肖友鹏
XIAO Youpeng(Engineering Research Center of Nuclear Technology Application,Ministry of Education,East China University of Technology,Nanchang 330013,China)
出处
《人工晶体学报》
CAS
北大核心
2022年第7期1270-1274,共5页
Journal of Synthetic Crystals
基金
东华理工大学博士科研启动基金(DHBK2019170)。
关键词
硫化亚锗吸收层
硫化镉缓冲层
太阳电池
厚度
掺杂浓度
体缺陷
模拟
GeSe absorber layer
CdS buffer layer
solar cell
thickness
doping concentration
bulk defect
simulation
