摘要
硒化锑太阳电池以其原材料丰富、工艺简单和结构稳定等优势,近年来得到了快速发展。本论文采用近空间升华法制备硒化锑光电薄膜,并对硒化锑的生长进行了机理研究和参数优化。结果显示:衬底温度的提升有助于硒化锑薄膜的晶化。当衬底温度为340℃时,薄膜具有较高的晶化率和致密的表面形貌。另一方面,蒸发间距的改变能够调制硒化锑薄膜的择优取向。当蒸发间距为10 mm时,薄膜具有明显的(002)取向的择优,对应(Sb4Se6)n带垂直于衬底生长,使硒化锑光吸收层具有优异的载流子传输特性。将优化好的硒化锑薄膜应用到太阳电池中,以FTO/CdS/Sb2Se3/P3HT/C的器件结构,获得了5.78%的光电转换效率,其中开路电压为0.375 V,短路电流密度为28.01 mA/cm2,填充因子为54.94%。以上研究为高取向性硒化锑太阳电池的优化制备提供了技术路线,并显示出了硒化锑太阳电池的研究潜力。
Antimony selenide(Sb2Se3)solar cell has been developed rapidly in recent years due to its advantages of abundant raw materials,simple preparation,and stable structure.In this paper,antimony selenide photoelectric thin films were prepared by close space sublimation method,and the growth mechanism and parameters of antimony selenide were studied.The results show that the increase of substrate temperature contributes to the crystallization of antimony selenide thin films.When the substrate temperature is 340℃,the thin film has high crystallization ratio and dense surface morphology.On the other hand,the change of evaporation distance can modulate the preferred orientation of antimony selenide films.When the evaporation distance is 10 mm,the thin film has an obvious(002)orientation,and the corresponding(Sb4Se6)n ribbons grows perpendicular to the substrate,so that the antimony selenide photo-absorption layer can have an excellent carrier transport characteristics.Moreover,the optimized antimony selenide thin film was applied to the solar cells,and the photoelectric conversion efficiency of 5.78%was obtained by using the device structure of FTO/CdS/Sb2Se3/P3 HT/C,among which the open-circuit voltage was 0.375 V,the short-circuit current density was 28.01 mA/cm2,and the filling factor was 54.94%.The above research provides a technical route for the optimal preparation of high-orientation antimony selenide solar cells and shows the research potential of antimony selenide solar cells.
作者
李海明
李明臻
冯新文
张俊双
战文华
姜磊
郭洪武
周静
曹宇
LI Hai-ming;LI Ming-zhen;FENG Xin-wen;ZHANG Jun-shuang;ZHAN Wen-hua;JIANG Lei;GUO Hong-wu;ZHOU Jing;CAO Yu(State Grid East Inner Mongolia Electric Power Company Limited,Hohhot 010020,China;School of Electrical Engineering,School of Chemical Engineering Northeast Electric Power University,Jilin 132012,China;Chifeng Power Supply Company of State Grid East Inner Mongolia Electric Power Company Limited,Chifeng 024000,China)
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2021年第3期304-309,共6页
Journal of Optoelectronics·Laser
基金
国家自然科学基金项目(51772049)
国家电网公司科学技术项目(SGMDCF00YWJS2000768)
吉林省教育厅“十三五”科学技术项目(JJKH20190705KJ)
吉林省发改委产业技术研究与开发项目(2019C042)资助项目。
关键词
近空间升华法
硒化锑薄膜
生长取向控制
太阳电池
close space sublimation
antimony selenide thin film
orientation control
solar cell
