期刊文献+

直流固态功率控制器中Cascode型GaN HEMT开关过程的振荡问题

Cascode GaN HEMT Switching Process Oscillation in DC Solid State Power Controller
下载PDF
导出
摘要 该文针对基于共源共栅氮化镓高电子迁移率晶体管(Cascode GaN HEMT)的直流固态功率控制器(SSPC)在开通过程中的振荡问题,利用Spice模型与Q3D软件提取Cascode结构内部寄生参数,结合SSPC实际工作情况和Cascode结构对开通和关断过程进行分析,在Saber软件中对SSPC开通过程进行仿真分析。仿真结果表明,振荡产生的主要原因是,在SSPC开通过程中,Cascode GaN HEMT长时间工作在饱和区,容易受到外界干扰产生振荡,且内部存在正反馈环路。针对该问题,该文提出并联RC吸收电路和增大门级驱动电阻的方案,实验结果表明,所提出的方案可以有效抑制振荡。 In this paper,the oscillation problem of DC solid-state power controller(SSPC)based on Cascode Gallium Nitride high electron mobility transistor(Cascode GaN HEMT)during the turn-on process is analyzed.The SPICE model and Q3D software are used to extract the internal parasitic parameters of the Cascode structure.Combining the actual working conditions of the DC SSPC and the Cascode structure,the turn-on and turn-off process of the SSPC is simulated and analyzed in the Saber software.The simulation results show that one of the causes of the oscillation is that Cascode GaN HEMT works in the saturation region for a long time during the SSPC turn-on process,and is so susceptible to external interference to cause oscillation,and the another cause is a positive feedback loop inside.To solve this problem,the scheme of paralleling RC absorption circuit and increasing gate drive resistance is proposed.Experimental verification shows that the proposed scheme can effectively suppress the oscillation.
作者 赵瑞博 王莉 黄瑞 Zhao Ruibo;Wang Li;Huang Rui(College of Automation Engineering Nanjing University of Aeronautics and Astronautics,Nanjing 211100 China)
出处 《电工技术学报》 EI CSCD 北大核心 2022年第S01期267-276,共10页 Transactions of China Electrotechnical Society
基金 国家自然科学基金资助项目(51777092)。
关键词 共源共栅氮化镓高电子迁移率晶体管 振荡 固态功率控制器 正反馈 Cascode GaN high electron mobility transistor(HEMT) oscillation solid state power controller(SSPC) positive feedback
  • 相关文献

参考文献6

二级参考文献26

  • 1S. Tamura, Y. Anda, M. lshida, Y. Uemoto, T. Ueda, T. Tanaka, D. Ueda. Recent advances in gan power switching devices[C]. Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, 1-4. 被引量:1
  • 2M.J., Jinzhu Li, Jin Wang. Applications of Gallium Nitride in power electronics[C]. Power and Energy Conference at Illinois (PECI), 2013, 1-7. 被引量:1
  • 3Scott, M.J, Ke Zou, Inoa, E, Duarte, R., Yi Huang, Jin Wang. A Gallium Nitride switched-capacitor power inverter for photovoltaic applications[C]. Applied Power Electronics Conference and Exposition (APEC), 2012, 46-52. 被引量:1
  • 4Scott, M.J., Ke Zou, Jin Wang, et al. A Gallium Nitride switched-capacitor circuit using synchronous rectification[J]. 1EEE Transactions on lndustry Applications, 2013, 49(3):1383-1391. 被引量:1
  • 5Akira Nakajima, Kazuto Takao and Hiromichi Ohashi. GaN power transistor modeling for high-speed converter circuit design[J]. IEEE Transactions on Electron Devices. 2013, 60 (2): 646-651. 被引量:1
  • 6Bo Yang, Fred C. Lee and Alpha J. Zhang. LLC resonant converter for front end DC/DC conversion [C]. IEEE APEC. 2002, 2:1108-1112. 被引量:1
  • 7Delaine, Johan, Jeannin, Pierre-Olivier, Frey, David, Guepratte, Kevin, "Improvement of GaN transistors working conditions to increase efficiency of A 100W DC-DC converter," Applied Power Electronics Conference and Exposition (APEC) 3,656-66, 2013. 被引量:1
  • 8Dong M, Elmes J, Peper M. Investigation on inherently safe gate drive techniques for normally-on wide bandgap power semiconductor switching devices[C]. Energy Conversion Congress and Exposition, 2009: 120-125. 被引量:1
  • 9Ishibashi T, Okamoto M, Hiraki E. Resonant gate driver for normally-on GaN high-electron-mobility transistor[C]. ECCE Asia Downunder (ECCE Asia), 2013: 365-371. 被引量:1
  • 10Liu Z, Huang X, Lee F C, Simulation model development and verification for high voltage GaN HEMT in Cascode structure[C]. Energy Conversion Congress and Exposition (ECCE), 2013: 3579-3586. 被引量:1

共引文献28

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部