摘要
Chemical vapor deposition(CVD)-grown graphene on copper foils is subject to the Cu substrate, which affects the spatial distribution of strain and doping, thus influencing the electronic properties of graphene. However, plenty of electronic devices based on CVD-grown graphene require transfer process and the distribution of doping and strain in CVD-grown graphene transferred onto the insulating substrates remains elusive.
出处
《Rare Metals》
SCIE
EI
CAS
CSCD
2022年第5期1727-1734,共8页
稀有金属（英文版）
基金
the National Natural Science Foundation of China(Nos.51772043,51872039,52021001 and 51802036)
Shenzhen Science and Technology Program(No.(2021)105)。
