摘要
介绍了一款V波段超宽带放大器芯片,采用GaAs pHEMT工艺制作。该芯片具有超宽带、高增益、高效率、小尺寸等优点,主要用于射频信号放大。微波在片测试系统对该芯片实际测试结果显示,在50 GHz~66 GHz范围内,小信号增益24 dB~26 dB,1 dB压缩输出功率大于18 dBm,电流小于120 mA,带内输入/输出电压驻波比小于1.4:1,芯片尺寸为3.20 mm×1.40 mm×0.07 mm。
A V-band ultra wideband amplifier chip is introduced,which is fabricated by GaAs pHEMT process.The chip has the advantages of ultra wideband,high gain,high efficiency and small size.It is mainly used for RF signal amplification.The actual test results of the chip given by the microwave on-chip test system show that in the range of 50 GHz~66 GHz,the small signal gain is 24 dB~26 dB,the 1 dB compression output power is greater than 18 dBm,the current is less than 120 mA,the in-band input/output voltage standing wave ratio is less than 1.4:1,and the chip size is 3.20 mm × 1.40 mm × 0.07 mm。
作者
徐伟
XU Wei(The 13th Research Institute of CETC,Shijiazhuang 050051,China)
出处
《现代信息科技》
2022年第4期69-71,共3页
Modern Information Technology
