摘要
小电流下饱和压降法(V_(ce)法)和阈值电压法(V_(th)法)是IGBT热阻测试标准中推荐使用的两种结温测量方法,然而并没有说明两种方法测得的结温的关系及等效性。首先理论分析了小电流下饱和电压和阈值电压的电压构成,表明Vce法测得的结温反映的是芯片集电极侧的温度信息,Vth法测得的结温反映的是芯片发射极侧的温度信息,由于芯片内部存在垂直温度梯度,推断Vth法测得的结温将高于Vce法测得的结温;然后根据两种测量方法的测量原理,搭建了IGBT结温测量平台,在不同负载电流下用两种方法测量结温,实验结果验证了理论预测,且两种方法测得的结温的差值随着负载电流增加而增大。最后,提出一种简易热校准模型用于快速计算差值,使得两种方法的结果可以等效变换并进行公平对比。
The Vcemethod and the Vthmethod are two recommended junction temperature measurement methods in the IGBT thermal resistance test standard.However,the relationship and equivalence of the junction temperature measured by the two methods are not explained.Firstly,the voltage composition of Vceand Vthwas theoretically analyzed,which shows that the junction temperature measured by the Vcemethod reflects the temperature information on the collector side,and the junction temperature measured by the Vthmethod reflects the temperature information on the emitter side.Due to the vertical temperature gradient inside the chip,it is inferred that the junction temperature measured by the Vthmethod will be higher than that by the Vcemethod.Then,according to the measurement principles of the two methods,an IGBT junction temperature measurement platform was built,and the junction temperature was measured by two methods under different load currents.The experimental results verify the theoretical prediction,and the junction temperature difference between the two methods increases as the load current increases.Finally,a simple thermal calibration model was proposed to quickly calculate the difference,so that the results of the two methods could be equivalently transformed and fairly compared.
作者
曾晓彤
王荣茂
ZENG Xiaotong;WANG Rongmao(College of Automotive Engineering/New Energy Automobile College,Xiangyang Auto Vocational Technical College,Xiangyang 441021,Hubei,China;School of Electronic Information and Electrical Engineering,Shanghai Jiaotong University,Shanghai 200240,China)
出处
《电气传动》
2022年第11期24-28,共5页
Electric Drive
基金
湖北省高等学校省级教学研究项目(2018589)
湖北省职教学会2018年重点课题(ZJGA201808)。
