摘要
为提高28 nm体硅工艺下的触发器的抗SEU能力,针对28 nm集成电路的版图空间布局加固技术进行了研究,基于敏感节点对分离和电荷补偿原理,设计了2种抗辐射加固触发器版图结构。同时设计了3种不同敏感节点对分离距离和采用电荷补偿原理加固的触发器链,通过流片和封装后对芯片进行了抗单粒子翻转试验。试验结果表明,采用的2种版图加固方法可使单粒子翻转数下降95%以上;当入射重离子LET值为37 MeV·cm^(2)·mg^(-1)时,电荷补偿原理的版图加固结构抗单粒子翻转性能更强;28 nm工艺下,版图加固最优敏感节点对的距离为3倍标准单位距离。
To improve the ability of flip-flop agnist single event upset under 28 nm bulk silicon process,a hardened technology of the layout of 28 nm integrated circuit is studied.Based on the principles of the sensitive node pair separation and the charge compensation,two radiation hardened layout structures of flip-flops are designed.Three kinds of flip-flop chains based on different separation distances of sensitive node pairs and hardened by the principle of charge compensation are designed.After tape-out and packaging,the chip is tested for single event upset.The test results show that the two types of layout radiation hardened methods can reduce the number of single event upset by more than 95%,When the incident heavy ion LET value is 37 MeV·cm^(2)·mg^(-1),the circuit layout radiation hardened structure based on the charge compensation principle has stronger resistance to single event upset,and the distance of the optimal sensitive node pair is 3 d under the 28 nm process.
作者
苑靖爽
赵元富
王亮
李同德
孙雨
朱永钦
YUAN Jingshuang;ZHAO Yuanfu;WANG Liang;LI Tongde;SUN Yu;ZHU Yongqin(Beijing Institute of Microelectronics Technology,Beijing 100076,China;China Academy of Aerospace Electronics Technology,Beijing 100094,China;Laboratory of Science and Technology on Radiation Hardened Integrated Circuits,CASC,Beijing 100094,China)
出处
《现代应用物理》
2022年第1期110-115,共6页
Modern Applied Physics
基金
国家自然科学基金资助项目(11690045,61674015,11690040)。
关键词
单粒子翻转
触发器
敏感节点对
单粒子加固设计
重离子试验
single event upset
flip-flop
sensitive node pair
single event hardened design
heavy ion test
