摘要
介绍了一种基于0.18μm SiGe BiCMOS工艺的,可应用于高速通信的25 Gb/s可变增益放大器(VGA)。该放大器由核心电路、输出缓冲器和偏置电路组成,核心电路采用改进型Gilbert结构,增大了电路的增益动态范围;同时采用电感峰化技术克服大寄生电容来实现宽带特性。后仿真结果表明,该可变增益放大器的最大增益为20.15 dB,-3 dB带宽(BW)为26.8 GHz,可支持高达25 Gb/s的数据速率,在3.3 V电源电压下的功耗为26.4 mW,芯片大小为1 120μm×1 167μm。
A 25 Gb/s variable-gain amplifier(VGA) based on 0.18 μm SiGe BiCMOS process was introduced for high-speed communications. The proposed VGA consists of a VGA core, an output buffer and a bias circuit. The core circuit of the VGA adopts an improved Gilbert structure to increase the gain dynamic range of the circuit. Meanwhile, the VGA achieves the broadband characteristic by utilizing inductive peaking technique to overcome the large parasitic capacitances. The post-simulation results show that the VGA exhibits a maximum gain of 20.15 dB and a-3 dB bandwidth(BW) of 26.8 GHz, which can support a data rate up to 25 Gb/s. The VGA consumes a power of 26.4 mW from 3.3 V supply voltage and occupied an area of 1 120 μm×1 167 μm.
作者
曹庆珊
郑吴家锐
李硕
何进
CAO Qingshan;ZHENGWU Jiarui;LI Shuo;HE Jin(School of Physics and Technology.Wuhan University,Wuhan 430072,CHN)
出处
《半导体光电》
CAS
北大核心
2021年第6期799-802,808,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61774113,61874079,62074116,81971702)。
