摘要
本文主要通过研究玻璃在混合集成电路金属外壳的润湿性能,探讨封接工艺参数对产品质量的影响。通过扫描电子显微镜(SEM)和X射线能谱分析(EDS)对封接区域的微观组织形貌进行表征,分析玻璃产生气泡的因素以及封接界面的元素分布,确定混合集成电路金属外壳的最佳封接工艺参数。结果表明,混合集成电路金属外壳-玻璃封接的最佳温度为960℃,封接保温时间为30min,高温区的氮气流量为45L/min。采用本工艺制备的混合集成电路金属外壳的泄漏率≤1.0×10;Pa·m;/s、绝缘电阻≥5.0×10;?(DC:500V)、耐电压≥5000V,封接拉力≥389N。封接处玻璃体致密,玻璃与金属壳体中的元素相互迁移,在封接界面处形成金属键、离子共价键共存的混合区域,封接效果显著提升。
Influence of different sealing processes and glass wettability of the high quality performance of package of ICglass-to-metal seals was studied.The microstructure behavior of the sealing areas was studied quantitatively using scanning electron microscope and energy spectrum techniques.Analyzed the factors of glass bubbles and the element distribution of the sealing interface,the best sealing parameters of the optoelectronic glass-to-metal seals was determined,the temperature is 960℃,time is 30 min,and the nitrogen flow rate in the high temperature zone is 45L/min.The results show that the package of ICusing thetechnological parameter,theleakage rate of ≤1.0×10;Pa·m;/s,insulation resistance of≥5.0×10;Ω (DC:500V),withstand voltage of≥5000V,and sealing force of≥389N.Sealing effectsare significantly improved that migrate mutually of the elements in glass and alloy,forming coexistence of metal bond and ionic covalent bond at the sealing interface.
作者
杨文波
王宇飞
宋瑞
韩坤炎
程坤
YANG Wen-bo;WANG Yu-fei;SONG Rui;HAN Kun-yan;CHENG Kun(Xi'an Seal Electronic Material Technology Co.,Ltd.,Xi’an 710201,China)
出处
《世界有色金属》
2021年第20期193-195,共3页
World Nonferrous Metals
关键词
集成电路
金属外壳
封接玻璃
Package of IC
metal sealing
sealing glass
