摘要
对级联型氮化镓高电子迁移率晶体管(GaN HEMT)在非钳位感性负载开关(UIS)应力下的可靠性机理进行研究.通过实验分析和软件仿真验证,揭示级联型氮化镓功率器件在单脉冲UIS应力下的耐受机理、失效机理以及在多脉冲UIS应力下的电参数退化机理.在常开型氮化镓晶体管从开态转换到关态的过程中,器件源漏两端的电压增大.通过自配置级联的方式,观察器件内部节点的电压情况,从而分析其失效过程.实验结果表明器件的失效位置出现在低压硅基器件上,利用仿真软件分析得出逆压电效应引起关态漏电的增大,最终导致器件失效.此外,结合测试结果与仿真分析,发现重复UIS应力会引起电子陷阱的产生与积累,从而导致相关电参数的退化.
The unclamped inductive switching(UIS)reliability mechanism of cascode Gallium nitride high electron mobility transistor(GaN HEMT)was studied.Through experimental analysis and software simulation verification,the withstanding mechanism,failure mechanism of cascode GaN power devices under single-pulse UIS stress,and the degradation mechanism of electrical parameter under multi-pulse UIS stress were revealed.During the process that normally-on GaN transistor switches from the on-state to the off-state,the voltage drop on the device gradually increases.Then,the voltage situation of the internal nodes of the device can be observed in depth through the cascode method to analyze the failure process.The experimental results show that the failure location of the device appears on the low-voltage silicon-based device,and the simulation analysis shows that the increased leakage current caused by the inverse piezoelectric effect causes the final failure of the device.In addition,combined with the test results and simulation analysis,it is found that repetitive UIS stress will cause the generation and accumulation of electron traps,thus leading to the degradation of the electrical parameters of the device.
作者
钱乐
李胜
张弛
刘斯扬
孙伟锋
Qian Le;Li Sheng;Zhang Chi;Liu Siyang;Sun Weifeng(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2021年第6期1103-1108,共6页
Journal of Southeast University：Natural Science Edition
基金
国家重点研发计划资助项目(2020YFF0218501)
江苏省科技成果转化基金资助项目(BA2020027)
江苏省成果转化项目(BA2020030).
关键词
级联型氮化镓HEMT
UIS
失效
退化
cascode Gallium nitride high electron mobility transistor(GaN HEMT)
unclamped inductive switching(UIS)
failure
degradation
