摘要
采用SiC衬底0.45μm GaN HEMT工艺,设计了一款GaN混合集成两级非对称Doherty功放,在较大的回退状态下仍具有较高的效率。为了减小芯片尺寸,采用无源集总元件搭建功率分配器,同时采用π型结构替代1/4λ阻抗变换线。测试结果表明:在3.4~3.6 GHz的频率范围内,饱和功率达到45.2 dBm,饱和效率达到53.2%。输出功率回退8 dB时的效率达到40%,线性增益达到24 dB。以80 MHz带宽LTE信号作为输入,经过数字预失真(DPD)技术优化后的邻信道功率比(ACPR)为-50.8 dBc。电路尺寸为10 mm×6 mm。
A GaN hybrid microwave integrated circuit power amplifier with two-level asymmetric Doherty was designed by exploiting 0.45μm GaN HEMT technology on SiC substrate,which had a higher collector efficiency under a larger power back-off state.The circuit was miniaturized by using passive lumped components to build the power divider,and quarter-wave impedance transformer could be fully integrated usingπ-type structure.The test results show that the saturated output reaches 45.2 dBm and saturated drain efficiency reaches 53.2%in the frequency range from 3.4 GHz to 3.6 GHz.When the power is backed off by 8 dB,the drain efficiency is 53.2%,and the power gain is 24 dB.The ACPR which optimized by the DPD technology is-50.8 dBc when driven by 80 MHz LTE signal.The size of the circuit is 10 mm×6 mm.
作者
汪荣昌
陈新宇
张吕
陈志勇
祝超
曾瑞峰
WANG Rongchang;CHEN Xinyu;ZHANG Lü;CHEN Zhiyong;ZHU Chao;ZENG Ruifeng(Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN;Nanjing Guobo Electronic Company Limited,Nanjing,211100,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2021年第5期343-347,358,共6页
Research & Progress of SSE
关键词
氮化镓高电子迁移率晶体管
DOHERTY功放
小型化
数字预失真
GaN high electron mobility transistor(HEMT)
Doherty power amplifier
miniaturization
digital pre-distortion(DPD)
