摘要
In_(2/3)PSe_(3)因其对称性破缺的晶体结构、良好的发光性质和直接带隙特性,在光电子器件领域具有巨大的应用潜力.本研究采用化学气相输运法合成了In_(2/3)PSe_(3)单晶并通过机械剥离方法获得了二维In_(2/3)PSe_(3)纳米片.借助二次谐波(second-harmonic generation,SHG)和光致发光(photoluminescence,PL)光谱对其非线性光学和发光性质进行了系统的研究,结果表明In_(2/3)PSe_(3)纳米片具有本征对称性破缺的晶体结构和优异的发光性质.通过微纳加工技术构筑了基于In_(2/3)PSe_(3)纳米片的光探测器并研究了其光探测性能.基于In_(2/3)PSe_(3)纳米片的光探测器在365 nm波长的光照下,具有极低的暗电流(25 f A)、优异的探测度(6.28×10^(11)Jones)、高的开关比(4×10^(4))以及超快的响应速度(14μs/24μs).这些优异的光电性能预示着In_(2/3)PSe_(3)有潜力成为新一代高性能光探测器的核心材料.
Two-dimensional layered semiconductors have been the research focus of electronics and optoelectronics owing to their atomic thickness,light-matter interaction,and large-scale integration.Metal phosphorus trichalcogenides(MPTs),possessing the structure of[P_(2)S_(6)]^(4–)or[P_(2)Se_(6)]^(4–)surrounded with metal cations,have emerged as newly rising stars and drawn widespread interests of researchers due to their novel electrical and optical properties.Compared with common transition metal dichalcogenides,two-dimensional(2D)MPTs have larger optical bandgaps(from 1.3 to 3.5 eV),higher light absorption efficiency and richer bandgap structures due to the increased degree of freedom from the elements and atomic ratio,which highlight its great advantages in the field of optoelectronics.Among MPTs,In_(2/3)PSe_(3) owns special structure,in which two-thirds of the octahedral holes are occupied by the indium ions and the other one-third are vacant.The unique structure endows In_(2/3)PSe_(3) with intrinsic broken-symmetry,showing potential in non-linear optics.It was reported that bulk In_(2/3)PSe_(3) is a direct-bandgap semiconductor(2.0 eV),in which the electron transition process from the conduction band to valence band is direct without phonon assisting,indicating great potential in application of optoelectronic devices.However,there is no research reported on the optoelectronic property of In_(2/3)PSe_(3).According to the promising properties mentioned above,it is extremely urgent to characterize the optical and optoelectronic properties of 2D In_(2/3)PSe_(3) nanosheets.In this work,high-quality In_(2/3)PSe_(3) single crystals are synthesized by chemical vapor transport method and for the first time we achieve 2D In_(2/3)PSe_(3) nanosheets on SiO_(2)/Si substrate by mechanical exfoliation.X-ray diffractometer(XRD)and transmission electron microscope(TEM)are performed on In_(2/3)PSe_(3) nanosheets,which demonstrate their high quality and single-crystalline nature.Considering that the non-centrosymmetric space group
作者
刘贵恒
孙宗栋
苏建伟
冯昕
彭乔俊
李会巧
翟天佑
Guiheng Liu;Zongdong Sun;Jianwei Su;Xin Feng;Qiaojun Peng;Huiqiao Li;Tianyou Zhai(State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)
出处
《科学通报》
EI
CAS
CSCD
北大核心
2021年第31期4036-4044,共9页
Chinese Science Bulletin
基金
国家自然科学基金(21825103)
湖北省自然科学基金(2019CFA002)
中央高校基本科研业务费(2019kfyXMBZ018)资助。
