摘要
随着信息化时代的发展,全球对数据存储的需求越来越多,NAND FLASH作为一款大容量存储器也被广泛应用到各种储存设备中,其测试评价需求也日益递增。该文针对这类存储器介绍了一种基于ATE(Automatic Test Equipment)的NAND FLASH测试方法。首先以镁光的MT29Fxx Gxx芯片为例,介绍了NAND FLASH存储器的基本工作原理,并从功能测试、直流参数、交流参数三个方面对常用的测试方法进行了阐述。
With the development of information technology,the whole world demand for data storage is growing.As one of the bulk memory chips,NAND FLASH is widely used in various storage devices,and its test and evaluation requirements are increasing day by day.This paper introduces a NAND FLASH test method based on ATE for this kind of memory.We firstly,taking MT29FxxGxx(MICRON,inc.)as an example,introduce the basic working principle of NAND FLASH,and then the common test methods are described from three aspects of function test,DC parameters and AC parameters.
作者
常艳昭
冉翠翠
谈元伟
Chang Yan-zhao;Ran Cui-cui;Tan Yuan-wei(China Key System&Integrated Circuit Co.,Ltd.,Jiangsu Wuxi 214035)
出处
《电子质量》
2021年第10期41-47,共7页
Electronics Quality
