摘要
传统闪存(Flash)芯片耐久测试需要对整块芯片按扇区串行进行擦写测试,测试时间长、效率低、成本高,不利于其批量耐久测试和产业化发展。该文基于"资源换速度"的思想提出一种高效的Flash存储器并行耐久测试方法,通过对多片Flash芯片并行进行擦写测试,对不同芯片擦写不同扇区来提升其耐久测试效率,并进一步对耐久测试Flash芯片的不同扇区等效性进行分析,对等效性需要满足的条件和要求进行探讨。实验结果表明:并行耐久测试能有效缩短测试时间,其效率提升程度与并行测试的芯片数量成正比,加速测试结果与理论曲线符合较好。
Traditionally, the endurance test of Flash chips is unsuitable for massive production of Flash memories because its sector-by-sector serial procedure is time consuming, inefficient and uneconomical. To promote the test efficiency, a parallel method has been proposed in this paper by using of multi-sectors of different Flash chips at the same time. It has been derived from the idea of tradeoff between resource usage and speedup. Experimental results show that the speed of endurance test is accelerated and the degree of efficiency promotion is in direct proportion to the number of Flash chips. The test results tally with the theoretical results.
出处
《中国测试》
CAS
北大核心
2016年第5期24-27,共4页
China Measurement & Test
关键词
闪存
存储寿命
耐久测试
扇区等效性
并行测试
Flash
memory lifetime
endurance test
equivalence of sectors
parallel test
