摘要
1.3μm InAs/GaAs量子点(QD)激光器基于自身优异的光电特性,有望成为下一代光通信系统所急需的高性能、低成本光源。理论分析了提高量子点材料增益的几种方法,然后利用分子束外延(MBE)分别生长非掺杂、p型调制掺杂的8层高质量的量子点激光器外延结构,并分别制备了量子点激光器。另外,为了抑制量子点激发态与基态的激射竞争,设计并优化了激光器腔面的镀膜工艺。最终实现了300μm超短腔长基态激射的p型调制掺杂1.3μm InAs/GaAs的量子点激光器,展示出了其在高速光通信系统应用中的巨大潜力。
Objective 1.3-μm GaAs-basedⅢ--Ⅴquantum dot(QD)lasers have several advantages over commercial lasers of InP-basedⅢ--Ⅴquantum well lasers,such as low threshold current density,high quantum efficiency,hightemperature insensitivity,high optical feedback tolerance,and larger modulation bandwidth owing to the threedimensional quantum confinement effect of carriers.This has made the 1.3-μm GaAs-based QD laser a very promising candidate as a light source for next-generation low-power-consumption,low-cost,small-footprint,and high-speed fiber-optical communication systems.However,the closely spaced energy levels of the confined holes and In-Ga interdiffusion during epitaxial growth for practical QD laser structures make the performance of current devices still far short of expectations.In addition,for high-speed lasers,a short cavity length is crucial because of the significantly reduced photon lifetime,but there is always a trade-off between cavity length and the saturation modal gain.In recent years,introducing p-doping in the active region to optimize the properties of QD materials has attracted extensive interest.p-Doping inⅢ--ⅤQD structures to compensate the thermal escape of carriers leads to better thermal stability.Modulation p-doping can significantly inhibit Ga vacancy propagation,leading to smaller interdiffusion and a reduced intermixing effect.In 2010,the ground state 25Gbit/s operation of a 1.3μm p-doped QD laser was first reported by Tanaka et al.Recently,a 15Gbit/s high-speed 1.3μm modulation p-doped QD laser has been demonstrated in a 500μm long QD laser by Arsenijevic et al.In this work,we further optimize the performance of QD lasers using subtle epitaxial growth and careful structure design.Methods The InAs/GaAs multiple QD layer structures were grown using molecular beam epitaxy(MBE)on Sidoped GaAs(100)substrates.The QD active region consists of eight stacks of QD layers separated by 33nm GaAs spacers(Fig.1).Each QD layer comprises 2.7monolayer InAs covered with a 6nm InGaAs strain-red
作者
姚中辉
陈红梅
王拓
蒋成
张子旸
Yao Zhonghui;Chen Hongmei;Wang Tuo;Jiang Cheng;Zhang Ziyang(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei,Anhui 230026,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China;Qingdao Yichen Leishuo Technology Co.,Ltd.,Qingdao,Shandong 266000,China;Nanchang Research Institute,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Nanchang,Jiangxi 330200,China;State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin 130022,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2021年第16期1-7,共7页
Chinese Journal of Lasers
基金
江西省应用研究培育计划资助项目(20181BBE58020)。
关键词
激光器
量子点
p型调制掺杂
分子束外延
腔面镀膜
lasers
quantum dots
p-modulation doping
molecular beam epitaxy
facet coating
