期刊文献+

钙钛矿光电二极管光电转换特性探索研究 被引量:1

Research on Photoelectric Conversion Characteristics of Perovskite Light-emitting Diodes
下载PDF
导出
摘要 基于光电二极管的光致发电和电致发光特性可以实现光电-电光转换特性。因此,近年来各类半导体光电材料制成的太阳能电池(solarcell)和发光二极管(light-emitting diodes)吸引了人们的极大兴趣。然而现阶段的光电转换器件要求同时兼具低制造成本,高光伏表现和节能环保的特性。迫使科研人员寻找一种新的光伏材料满足上述要求。以甲基胺碘化铅(MAPbI3)为代表的金属卤化物钙钛矿(Perovskite)材料因具有生长工艺简单、光谱吸收范围宽和缺陷容忍度高等优点,是作为新型光电器件的理想材料。文中将对该种材料在两种光电器件中实现光电-电光转换的工作原理进行分析。 Based on the photoelectric generation and electroluminescence characteristics of photodiodes,the photoelectric to electro-optical conversion characteristics can be realized.Therefore,solar cells and light-emitting diodes being made by various semiconductor photoelectric materials have attracted great interest in recent years.However,the current photoelectric conversion devices require low manufacturing cost,high photovoltaic performance and energy saving and environmental protection characteristics.So a new photovoltaic material is needed to be found to meet the above requirements.Metal halide perovskite,represented by MAPbI3,is an ideal material for new optoelectronic devices because of its advantages such as simple growth process,wide spectral absorption range and high defect tolerance.The working principle of photoelectric to electro-optical conversion in two kinds of photoelectric devices is analyzed.
作者 王珂 白江坡 卢青青 冶振 WANG Ke;BAI Jiang-po;LU Qing-qing;YE Zhen(Aviation Military Representative Office of the Army Equipment Department in Tianjin Region,Tianjin,China;AVIC Wanli Aviation Electro-mechanical Co,,Ltd.,Lanzhou,China)
出处 《光电技术应用》 2021年第4期42-45,共4页 Electro-Optic Technology Application
关键词 钙钛矿 PN结二极管 光电转换 Perovskite PN junction diode photoelectric conversion
  • 相关文献

参考文献3

二级参考文献19

  • 1李述体,江风益,范广涵,王立,莫春兰,方文卿.In_xGa_(1-x)N薄膜的弯曲因子及斯托克斯移动研究[J].光学学报,2004,24(6):751-755. 被引量:4
  • 2Huang S., Wu H., Fan B. et al.. A chip-level electrothermal-coupled design model for high-power light-emitting diodes[J]. J. Appl. Phys., 2010, 107(5): 054509. 被引量:1
  • 3J. H. Son, J. L. Lee. Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes[J]. Appl. Phys. Lett., 2010, 97(3): 032109. 被引量:1
  • 4Jianzheng Hu, Lianqiao Yang, Moo Whan Shin. Electrical, optical and thermal degradation of high power GaN/InGaNlight-emitting diodes[J]. J. Phys. D: Appl. Phys., 2008, 41(3): 035107. 被引量:1
  • 5Yong Hoon Cho, G. H. Gainer, A. J. Fischer et al.. "S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells[J]. Appl. Phys. Lett., 1998, 73(10): 1370~1372. 被引量:1
  • 6Nakamura S.. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J]. Science, 1998, 281(5379): 956~961. 被引量:1
  • 7D. Cherns, S. J. Henley. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence[J]. Appl. Phys. Lett., 2001, 78(18): 2691~2693. 被引量:1
  • 8J. J. Wierer, Jr., A. J. Fischer, D. D. Koleske. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices[J]. Appl. Phys. Lett., 2010, 96(5): 051107. 被引量:1
  • 9A. Bell, S. Srinivasan, C. Plumlee et al.. Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers[J]. J. Appl. Phys., 2004, 95(9): 4670~4674. 被引量:1
  • 10Shihwei Feng, Yungchen Cheng, Yiyin Chung et al.. Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures[J]. J. Appl. Phys., 2002, 92(8): 4441~4448. 被引量:1

共引文献7

同被引文献14

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部