摘要
通过开展双面机械抛光分组实验,探讨工艺参数对碳化硅(SiC)衬底总厚度变化(TTV)和材料去除率的影响。研究结果表明,设备转速越高、载荷压力越大,材料去除率越高;SiC衬底TTV随载荷压力与转速的增加先降后升。根据分组实验得到的结果进行工艺参数优化。SiC衬底双面机械抛光后获得了材料去除率平均值为4.86μm/h、TTV平均值为2.35μm、弯曲度平均值为6.03μm、翘曲度平均值为7.6μm、粗糙度平均值为0.8 nm的SiC衬底。该研究为优化SiC衬底双面抛光工艺、提高SiC衬底抛光精度和加工效率提供了参考。
Double-sided mechanical polishing group experiments were carried out to explore the effects of process parameters on the total thickness variation(TTV) and material removal rate of silicon carbide(SiC) substrate. The study results show that the higher the equipment rotation speed and the greater the load pressure, the higher the material removal rate. Meanwhile, the TTV of the SiC substrate first decreases and then increases with the increases of the load pressure and rotation speed. The process parameters were optimized according to results of group experiments. After double-sided mechanical polishing, the SiC substrate with a material removal rate average value of 4.86 μm/h, a TTV average value of 2.35 μm, a bow average value of 6.03 μm, a warpage average value of 7.6 μm and a roughness average value of 0.8 nm was obtained. The research provides a reference for optimizing the double-sided mechanical polishing process and improving the polishing accuracy and processing efficiency of SiC substrates.
作者
贾军朋
白欣娇
李晓波
崔素杭
李帅
Jia Junpeng;Bai Xinjiao;Li Xiaobo;Cui Suhang;Li Shuai(Tonghui Electronic Technology Co.,Ltd.,Shijiazhuang 050200,China)
出处
《微纳电子技术》
CAS
北大核心
2021年第9期840-844,共5页
Micronanoelectronic Technology
基金
河北省重点研发计划新一代电子信息技术创新专项资助项目(20311001D)。
