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大功率倒装LED芯片陶瓷封装器件顶面微区发光均匀性 被引量:3

Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging
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摘要 高功率密度的陶瓷封装LED器件在大电流工作时,其顶面发光均匀性是该类器件的关键指标。本文在3.5 mm×3.5 mm的氮化铝陶瓷基板上金锡共晶了1.905 mm×1.830 mm(75 mil×72 mil)的LED倒装蓝光大功率芯片,然后分别制作成蓝光器件和白光器件,并分别对器件顶面的微区发光均匀性进行了研究。结果表明,蓝光器件在电流<3 A时,其顶面光强分布均匀,均匀性受N电极孔和电极间隙的影响较小;在4~8 A电流时,蓝光器件顶面光强分布不均匀,贯穿N电极孔测试区的光强大于电极孔之间测试区的光强,电极间隙区光强最低,离N电极孔越远的测试点光强越低;蓝光器件在8 A时整体光强达到饱和,而不同微区的光饱和程度及峰值波长随电流的变化有所不同;白光器件在0~4 A电流时,其顶面光强分布均匀。 The uniformity of light emission on the top surface of high-power-density LED devices with ceramic packages is a key indicator of this type of device when working at high currents.In this paper,the blue high-power LED flip chip(1.905 mm×1.830 mm(75 mil×72 mil))is soldered on an aluminum nitride ceramic substrate(3.5 mm×3.5 mm)through Au-Sn eutectic welding,and then were made into white light emitting device and blue light components.The uniformity of micro-area luminescence on the top surface of these devices was also studied.The results show that when the current is less than 4 A,the light intensity distribution on the top surface of the blue device is uniform,and the uniformity is less affected by the N electrode hole and the electrode gap.When the current is 4-8 A,the light intensity distribution on the top surface of the blue light device is uneven.The light passing through the test area of the N electrode hole is stronger than the light intensity of the test area between the electrode holes.The light intensity of the electrode gap area is the lowest,which is far from the N electrode hole.The farther the test point,the lower the light intensity.The overall light intensity of the blue light device reaches saturation at 8 A,but the degree of light saturation and peak wavelength of different micro-area vary with the current change;when the white light device is at a current of 0-4 A,the light intensity distribution on its top surface is uniform.
作者 李晓珍 熊传兵 汤英文 郝冬辉 LI Xiao-zhen;XIONG Chuan-bing;TANG Ying-wen;HAO Dong-hui(School of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China)
出处 《发光学报》 EI CAS CSCD 北大核心 2021年第9期1436-1445,共10页 Chinese Journal of Luminescence
基金 国家自然科学基金(51072076) 福建省科技厅产学研合作项目(2018H6015) 福建省高校创新团队培育计划(201821)资助项目。
关键词 微区发光 倒装芯片 电极孔 电极间隙 micro-luminescence flip chip electrode hole electrode gap
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