摘要
纳米压印是为应对半导体行业越来越高的芯片元件集成度而产生的高新技术,因其制造成本低、图形精确、生产率高等优势成为纳米领域的研究热点。残余层厚度作为大面积纳米压印光刻紫外固化工艺的重要参数,直接影响刻蚀工艺和基片的完整度。尝试通过改变旋涂转速和纳米压印胶的固体含量,来优化残余层厚度。通过实验与分析,给出了压印胶种类、转速及残余层厚度的优化方案,并且没有胶体收缩现象发生,为后续大面积复合纳米压印研究提供了工艺参数基础。
Nanoimprint is a new and high technology to cope with the increasing integration of chip components in the semiconductor industry.Because of its advantages of low manufacturing cost,accurate graphics and high productivity,it has become a research hotspot in the nano field.As an important parameter of UV curing process in large area nanoimprint lithography,the thickness of residual layer directly affects the etching process and the integrity of substrate.Optimization is made to the thickness of residual layer by changing the rotational speed of spin coating and the solid content of nanoimprinting resist.Through experiments and analysis,the optimization scheme of the imprinting resist type,rotating speed and residual layer thickness is given,and no colloid shrinkage occurs,which provides the basis of process parameters for the subsequent large area composite nanoimprinting research.
作者
曹海燕
CAO Haiyan(School of Intelligence&Electronic Engineering,Dalian Neusoft University of Information,Dalian 116023,China)
出处
《微处理机》
2021年第4期5-7,共3页
Microprocessors
基金
2020年度辽宁省自然科学基金项目“PN异质结型ZnO基高性能纳米发电器件的制备和关键技术研究”(2020-MS-316)。
