摘要
针对不同温度下SiC MOSFET模型精度不足的问题,提出一种基于模拟行为模型(ABM)器件建立SiC MOSFET模型的方法。分别对整体模型的沟道电流、导通电阻和栅漏电容部分进行改进,引入了阈值电压和跨导系数的温度调节函数,考虑了温度和栅源电压对导通电阻的影响,提出了无开关栅漏电容,建立了满足连续温度仿真的SiC MOSFET模型。仿真结果表明:基于ABM器件建立的模型能够准确地反映温度对阈值电压、跨导和导通电阻的影响,验证了所建模型的准确性。
Aiming at the insufficient accuracy of SiC MOSFET models at different temperatures,an establishment method of SiC MOSFET models based on analog behavior modeling(ABM)devices was proposed.The channel current,on-resistance,and gate-drain capacitance parts of the overall model were improved,respectively.A new temperature regulation function of threshold voltage and trans-conductance coefficient was added.Considering the effects of temperature and gate source voltage on on-state resistance,the SiC MOSFET model without switching gate drain capacitance was proposed,and the continuous temperature simulation was satisfied with this model.The simulation results show that the model based on the ABM device can accurately reflect the influence of temperature on the threshold voltage,transconductance and on-resistance.And the effectiveness of the method has been proved.
作者
王迪迪
宁平凡
刘婕
张永刚
WANG Didi;NING Pingfan;LIU Jie;ZHANG Yonggang(School of Electrical Engineering and Automation,Tiangong University,Tianjin 300387,China;School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China;Engineering Research Center of Ministry of Education for High-Power Semiconductor Lighting Application System,Tianjin 300387,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2021年第6期584-590,共7页
Electronic Components And Materials
基金
天津市教委科研计划重点项目(2018ZD15)。