摘要
阐述铜线键合时铝焊盘下氧化物电介质破裂及键合导致芯片失效的原因和机理,针对这一问题,通过工艺优化增加顶层铝焊盘厚度和顶层铝焊盘下面的氧化物电介质厚度,并结合焊盘结构的变化,有效解决铜线键合时铝焊盘下氧化物电介质破裂问题,进而改善芯片的功能性失效。
In this paper, the reason and mechanism of die failure caused by the crack of oxide dielectrics under aluminum pad during copper bonding are studied. In order to solve this problem, process optimization is used to increase the thickness of the top aluminum and the oxide dielectric under the top aluminum pad. Combined with the change of pad structure, the problem of oxide dielectric crack under the aluminum pad during copper wire bonding is effectively solved, and the functional failure of the chip is improved.
作者
梁肖
何军
康军
LIANG Xiao;He Jun;KANG Jun(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)
出处
《集成电路应用》
2021年第4期22-24,共3页
Application of IC
基金
上海市经济和信息化委员会软件和集成电路产业发展专项基金(1500223)。
