摘要
基于芯片图形特征尺寸越来越小,图形越来越密集,缺陷很难修补。阐述掩模在制作过程中缺陷形成的原因,对掩模缺陷进行分类,掩模修补的方法,包括激光气化法、局部曝光法、离子束修补。
The feature size of chip graphics is getting smaller and smaller, and the graphics are more and more dense, so it is difficult to repair the defects. This paper describes the causes of defects in the mask manufacturing process, classifies the mask defects, and puts forward the methods of mask repair, including laser vaporization, local exposure and ion beam repair.
作者
杨长华
YANG Changhua(Wuxi Zhongwei Mask Electronics Co.,Ltd.,Jiangsu 214135,China)
出处
《集成电路应用》
2021年第4期17-19,共3页
Application of IC
关键词
集成电路制造
光掩模
缺陷修补
离子束修补
integrated circuit manufacturing
photomask
defect repair
ion beam repair
