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Facile fabrication of heterostructure with p-BiOCl nanoflakes and n-ZnO thin film for UV photodetectors 被引量:2

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摘要 Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are confirmed as ~3.3 and~3.5 eV, respectively. Subsequently, a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process. At –5 V bias, the photocurrent of the device under 350 nm irradiation is ~800 times higher than that in dark, which indicates its strong UV light response characteristic. However, the on/off ratio of In–ZnO–In photodetector is ~20 and the Cu–BiOCl–Cu photodetector depicts very weak UV light response. The heterostructure device also shows a short decay time of 0.95 s, which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes. The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response, high signal-to-noise ratio, and high selectivity.
出处 《Journal of Semiconductors》 EI CAS CSCD 2021年第5期70-78,共9页 半导体学报(英文版)
基金 supported by the National Natural Science Foundation of China (Grant No. 61705043, 51872050 and11811530065) the National Key Research and Development Program of China (Grant No. 2017YFA0204600) the Natural Science Foundation of Jiangsu Province (No. BK20160568) National Postdoctoral Science Foundation of China (Grant No.2017M611411, 2018M640338, 2018T110344 and2019T120299) the Ministry of Education Joint Fund for Equipment Pre-Research (6141A02033241)。
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