期刊文献+

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nano- wires 被引量:4

原文传递
导出
摘要 High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environments are critical for solar observations, space communication, UV astronomy, and missile tracking. In this study, TiO2-ZnTiO3 heterojunction nanowire-based PDs are successfully developed and used to detect solar-blind UV light. A photoconductive analysis indicates that the fabricated PDs are sensitive to UV illumination, with high sensitivity, good stability, and high reproducibility. Further analysis indicates that the rich existence of grain boundaries within the TiO2-ZnTiO3 nanowire can greatly decrease the dark current and recombination of the electron-hole pairs and thereby significantly increase the device's photosensitivity, spectra responsivity (1.1 ~ 106), and external quantum efficiency (4.3 ~ 108 %). Moreover, the PDs exhibit good photodetective performance with fast photoresponse and recovery and excellent thermal stability at temperatures as high as 175 ℃. According to these results, TiO2-ZnTiO3 heterojunction nanowires exhibit great potential for applications in high-performance optical electronics and PDs, particularly next-generation photodetectors with the ability to operate in harsh environments.
出处 《Nano Research》 SCIE EI CAS CSCD 2015年第9期2822-2832,共11页 纳米研究(英文版)
分类号 O [理学]
  • 相关文献

参考文献3

二级参考文献21

  • 1Yang, P. D.; Yan, R. x., Fardy, M. Semiconductor nanowire: What's next? Nano Lell. 2010, 10, 1529-1536. 被引量:1
  • 2Zhai, T. Y.; Fang, X. S.; Liao, M. Y.; Xu, X. J.; Zeng, H. B.; Bando, Y.; Golberg, D. A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors. Sensors 2009, 9, 6504-6529. 被引量:1
  • 3Wang, J. F.; Gudiksen, M. S.; Duan, X. F.; Cui, Y.; Lieber, C. M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science 2001, 293,1455-1457. 被引量:1
  • 4Han, S.; Jin, W.; Zhang, D. H.; Tang, T.; Li, c.. Liu, X. L.; Liu, Z. Q.; Lei, B.; Zhou, C. W. Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination. Chern. Phys. Lett. 2004, 389, 176-180. 被引量:1
  • 5Thunich, S.; Prechtel, L.; Spirkoska, D.; Abstreiter, G.; Morral, A. F.; Holleitner, A. W. Photocurrent and photoconductance properties of a GaAs nanowire. Appl. Phys. Lett. 2009,95, 0831 I!. 被引量:1
  • 6Marshall, A. R. J.; Tan, C. H.; Steer, M. J.; David, J. P. R. Electron dominated impact ionization and avalanche gain characteristics in In.As photodiodes. Appl. Phys. Lett. 2008, 93, 111107. 被引量:1
  • 7Huang, X. D.; Stintz, A.; Li, H.; Lester, L. F.; Cheng, J. L.; Malloy, K. J. Passive mode-locking in 1.3 urn two-section lnAs quantum dot lasers. Appl. Phys. Lett. 2001, 78, 2825(1-3). 被引量:1
  • 8Borri, P.; Schneider, S.; Langbein, W.; Woggon, U.; Zhukov, A. E.; Ustinov, V. M.; Ledentsov, N. N.; Alferov, Z. 1.; Ouyang, D.; Bimberg, D. Ultrafast carrier dynamics and dephasing in IrtAs quantum-dot amplifiers emitting near 1.3-f.lm-wavelength at room temperature. Appl. Phys. Lett. 2001, 79, 2633-2635. 被引量:1
  • 9Erhard, N.; Seifert, P.; Prechtel, L.; Hertenberger, S.; Karl, H.; Abstreiter, G.; Koblmiiller, G.; Holleitner, A. W. Ultrafast photocurrents and THz generation in single InAs-nanowires. Ann. Phys. (Berlin) 2013, 525, 180-188. 被引量:1
  • 10Ford, A. C.; Ho, J. c., Fan, Z. Y.; Ergen, 0.; Altoe, V.; Aloni, S.; Razavi, H.; Javey, A. Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline lnAs nanowires. Nano Res. 2008, 1, 32-39. 被引量:1

共引文献17

同被引文献15

引证文献4

二级引证文献42

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部