摘要
基于硅微机械加工工艺,设计并制作一款W波段4路硅基波导功分/合成器。通过在8英寸的硅晶圆上采用干法刻蚀和晶圆级键合等工艺途径实现了硅基波导结构。根据硅微机械加工工艺的特点,设计了一种基于H面T型结和3dB耦合桥结构的波导功分/合成器。该功分/合成器表现出的损耗为0.25 dB。最后,采用该硅基功分/合成器对4只2W的GaN功率单片进行了功率合成,研制了W波段硅基合成功率放大器。测试结果表明,在92∼96 GHz的频率范围内,输入功率30 dBm的条件下,输出功率在7.03 W至8.05 W之间,典型电源附加效率为15%,平均合成效率为88%。
Based on the silicon micromachined technology,a W-band 4-way silicon waveguide power splitter/combiner was designed and fabricated in this paper.The silicon waveguide has been realized by dry etching and wafer level bonding on an 8 inch silicon wafer.According to the characteristics of silicon micromachining,a waveguide power splitter/combiner based on H-plane T-junction and 3dB coupler was designed.This silicon splitter/combiner exhibits extremely low loss.A silicon power combined PA module was developed by using this silicon power splitter/combiner together with four 2W GaN MMICs.The output power is between 7.03W and 8.05W across the frequency range of 92 to 96GHz with an input power of 30dBm,and the typical PAE is 15%.The average combining efficiency is 88%.
作者
成海峰
朱翔
候芳
胡三明
郭健
石归雄
CHENG Hai-Feng;ZHU Xiang;HOU Fang;HU San-Ming;GUO Jian;SHI Gui-Xiong(State Key Laboratory of Millimeter Wave,Southeast University,Nanjing 210096,China;Nanjing Electronic Device Institute,Nanjing 210016,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2021年第2期178-183,共6页
Journal of Infrared and Millimeter Waves
基金
国家重点研发计划重点专项(2019YFB2204701)
国家自然科学基金(61831006、62022023)
中央高校基本科研业务费专项资金资助(2242019K40196)
江苏省自然科学基金(BK20190011)。
