摘要
With the rapid development of data-driven human interaction,advanced datastorage technologies with lower power consumption,larger storage capacity,faster switching speed,and higher integration density have become the goals of future memory electronics.Nevertheless,the physical limitations of conventional Si-based binary storage systems lag far behind the ultrahigh-density requirements of post-Moore information storage.In this regard,the pursuit of alternatives and/or supplements to the existing storage technology has come to the forefront.Recently,organic-based resistive memory materials have emerged as promising candidates for next-generation information storage applications,which provide new possibilities of realizing high-performance organic electronics.Herein,the memory device structure,switching types,mechanisms,and recent advances in organic resistive memory materials are reviewed.In particular,their potential of fulfilling multilevel storage is summarized.Besides,the present challenges and future prospects confronted by organic resistive memory materials and devices are discussed.
出处
《InfoMat》
SCIE
CAS
2020年第6期995-1033,共39页
信息材料（英文）
基金
Jiangsu Key Disciplines of the Thirteenth Five-Year Plan,Grant/Award Number:20168765
Six Talent Peaks Project of Jiangsu Province,Grant/Award Number:XCL-078
NSF of Jiangsu Higher Education Institutions,Grant/Award Number:17KJA140001
National Excellent Doctoral Dissertation funds of China,Grant/Award Number:201455
National Natural Science Foundation of China,Grant/Award Numbers:21878199,21938006
Undergraduate Innovation and Entrepreneurship Training Program of Jiangsu Province,Grant/Award Number:201910332067Y
Natural Science Foundation of the Jiangsu Higher。
