摘要
In this paper,poly(pyridine-imide)s,PI-Ph and PI-Naphth,were successfully synthesised and fabricated for use as memory devices.The Al/PI-Ph/indium tin oxide(ITO)device showed dynamic random access memory characteristics,whereas Al/PI-Naphth/ITO showed rewritable(FLASH)memory characteristics.Characterisation of their UV,cyclic voltammograms,and density functional theory,were used to illustrate the different memory behaviours.The results show that the stability of electric-field-induced-charge-transfer complexes can affect memory performance.
In this paper,poly（pyridine-imide）s,PI-Ph and PI-Naphth,were successfully synthesised and fabricated for use as memory devices.The Al/PI-Ph/indium tin oxide（ITO）device showed dynamic random access memory characteristics,whereas Al/PI-Naphth/ITO showed rewritable（FLASH）memory characteristics.Characterisation of their UV,cyclic voltammograms,and density functional theory,were used to illustrate the different memory behaviours.The results show that the stability of electric-field-induced-charge-transfer complexes can affect memory performance.
基金
supported by the National Natural Science Foundation of China(21336005,21371128)
the major research project of Jiangsu Province Office of Education(15KJA150008)
