摘要
采用氚化钛源原位辐照和加速器低能电子束加速辐照实验,研究基于氚化钛/单晶硅PN结器件的氚辐伏电池模型和实验室组阵型电池原型样机的长期稳定性。测试电池模型和电池样机的氚辐伏输出随辐照时间的变化,分析辐照对单晶硅PN结型器件的本征暗特性和器件表面层材料缺陷的影响。结果表明,氚化钛源原位辐照电池模型在115 d的辐照中辐伏输出没有明显的衰减,辐照后单晶硅器件的本征暗特性曲线变化微小。电池模型的加速器低能电子束加速辐照实验表明,加速辐照在相同电子注量下对电池造成远大于氚源原位辐照的性能损伤,但损伤仅在辐照最初期快速产生,随后基本保持稳定,电子顺磁能谱(ESR)测试加速辐照60 min单晶硅器件材料的缺陷没有明显增加。组阵型实验室电池原型样机在64个月的室温储存中,基本单元的辐伏输出性能衰减比氚的自发衰变衰减有小幅增大,增大幅度小于11.4%;另外,组阵中单元之间串并联电连接有部分失效,这是后续应重点关注的问题。
Long-term stability of tritium voltaic battery was studied by titanium tritide sources in situ radiation and accelerating radiation from low-energy electron beams.The tritium voltaic experimental models and laboratory array battery prototype were made up of titanium tritide sources and c-silicon P+NN+devices with boronsilicate glass/Si 3N 4 passivation.The tritium voltaic outputs at different radiation time were compared.The intrinsic dark I-V characteristics of the c-silicon P+NN+devices and the defects in their surface material were analyzed.The tritium voltaic experimental models under titanium tritide sources in situ radiation kept output stability in 115 days and the intrinsic dark I-V characteristics of c-silicon P+NN+devices in the models changed little after radiation.Accelerating radiation from low-energy electron beams gave much severe damage in voltaic output of tritium voltaic experimental models than in that in situ radiation of titanium tritide sources under the same radiation fluxncies.But the radiation damage in accelerating radiation took place in the very early radiation term,and then kept stable.The intrinsic dark I-V characteristics of c-silicon P+NN+devices showed little change and the ESR defects in the device material were not noticeably increased after 60 min of accelerating radiation.Voltaic output and structure integrity of the laboratory array battery prototype were tested during 64 months.The fundamental voltaic unit showed a little larger decrease of 11.4%in voltaic Isc than tritium decay at 64 months.In addition,the electrical interconnection structure of the prototype exhibited partial failure,which should be put much more attention in the future.
作者
杨玉青
雷轶松
钟正坤
向勇军
刘业兵
李刚
秦传洲
徐建
罗顺忠
YANG Yuqing;LEI Yisong;ZHONG Zhengkun;XIANG Yongjun;LIU Yebing;LI Gang;QIN Chuanzhou;XU Jian;LUO Shunzhong(Institute of Nuclear Physics and Chemistry,China Academy of Engineering Physics,Mianyang 621900,China;No.44 Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)
出处
《同位素》
CAS
2021年第1期10-15,I0001,共7页
Journal of Isotopes
基金
国家自然科学基金资助项目(11575161,11605167)
中国工程物理研究院科技专项资助项目。
