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宇航电源脉宽调制器单粒子效应试验研究

Experimental study of single event effect on pulse width modulation controller applied in aerospace power
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摘要 对分别采用UC1825L和UC1825AL的宇航电源模块试验装置进行重离子辐照试验,验证2款脉宽调制器的单粒子效应阈值。试验结果表明,UC1825L的抗单粒子效应能力优于UC1825AL——UC1825AL如发生单粒子效应,会导致电源模块输出电压出现短时间(40~50 ms)下跌;而UC1825L如发生单粒子效应,对电源模块正常供电无影响。分析脉宽调制器受单粒子效应影响的机理,对比内部结构框图发现,UC1825AL比UC1825L多一个重启延时锁存器和一个故障锁存器,导致其对单粒子效应更敏感。研究结果可为宇航电源控制芯片的选用提供参考。 The single event effect threshold of two kinds of pulse width modulation controller is verified by heavy ion irradiation test on facilities of aerospace power module with UC1825L and UC1825AL being used,respectively.It is shown that the robustness of UC1825L against the single event effect is better than that of UC1825AL.Under the single event effect,,the output voltage of UC1825AL will fall in a short time between 40 ms and 50 ms,while no influence is observed in the power supply with UC1825L.The mechanism of the pulse width modulation controller being influenced by the single event effect is analyzed.By comparative analysis of the internal structure of the two PWMs,it is found that the UC1825AL has an extra restart delay latch and an extra fault latch with the function to reset the soft start.Those two latches may account for the sensibility of UC1825AL to the single event effect.
作者 张倩倩 朱博威 马涛 赵闯 王儒 ZHANG Qianqian;ZHU Bowei;MA Tao;ZHAO Chuang;WANG Ru(Beijing Spacecrafts,Beijing 100190,China;Beijing Space Power Conversion and Control Engineering Research Center,Beijing 100080,China)
出处 《航天器环境工程》 2020年第6期596-601,共6页 Spacecraft Environment Engineering
关键词 宇航电源 脉宽调制器 单粒子效应 试验研究 aerospace power supply pulse width modulation controller single event effect experimental study
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  • 1Kolasinski W A, Blake J B, Anthony J K, et al. Simulation of cosmic ray induced soft errors and latch-up in integrated circuit computer memories[J]. IEEE Trans Nuclear Science, 1979, 26(6): 5087-5091. 被引量:1
  • 2Bruguier C Palau J M. Single particle-induced latchup[J]. IEEE Trans Nuclear Science, 1996, 43(2): 522-532. 被引量:1
  • 3Koga R, Ferro R J, Mabry D J, et al. Ion-induced sustained high current condition in a bipolar device[J]. IEEE Trans Nuclear Science, 1990, 41(6): 2172-2177. 被引量:1
  • 4Johnston A H, Baze M E Experimental methods for determining latchup paths in integrated circuits[J]. IEEE Trans Nuclear Science, 1990, 32(6): 4260-4265. 被引量:1
  • 5Schroeder J E, Ochoa A, Dresendorfer Jr. P V, et al.Latchup elimination in bulk CMOS LSI circuits[J]. IEEE Trans Nuclear Science, 1980, 27(6): 1735-1738. 被引量:1
  • 6Johnston A H. The influence of VLSI technologyevolution on radiation induced latchup in space systems[J]. IEEE Trans Nuclear Science, 1996, 43(2): 505-521. 被引量:1
  • 7Hu Zhiyuan, Liu Zhangli, Shao Hua, et al. Comprehensive study on the total dose effects in a 180 nm CMOS technology[J]. IEEE Trans on Nucl Sei, 2011,58(3) :1347 - 1354. 被引量:1
  • 8Loveless T D, Massengill L W, Holman W T, et al.Modeling and mitigating single-events in voltage- controlled oscillators [J]. IEEE Trans on Nucl Sci, 2007,54(6) : 2561 - 2567. 被引量:1
  • 9Boulghassoul Y, Buchner S, McMorrow D, et al. In- vestigation of millisecond-log analog single-event transients in the LM6144 op amp[J]. IEEE Trans on Nucl Sci, 2004,51(6) :3529 - 3536. 被引量:1
  • 10Kruekmeyer K, Rennie R L, Ramachandran V. Use of code error and beat frequency test method to identify single envent upset sensitive circuit in a 1 GHz analog to digital converter[J].IEEE Trans on Nucl Sci, 2008, 55(4) :2013 - 2018. 被引量:1

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