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一种具有锁定检测结构的新型抗SET效应DLL设计技术 被引量:1

A New SET-Tolerant Radiation-Hardened DLL Design with Lock Detector
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摘要 针对延迟锁相环的结构和对单粒子效应敏感性的分析,提出了一种具有锁定检测结构的新型抗SET加固DLL结构,该结构能在满足原有DLL性能指标的前提下实现对SET效应的加固,保证DLL正交四相时钟的正确输出.基于65nm CMOS工艺进行电路设计仿真,结果显示在500 MHz工作频率下,此DLL功能正确,抗SET性能良好,SET阈值达到100 MeV·cm2/mg,在空间辐射环境中具有很好的稳定性. Abstract: This paper presents a new radiation-hardened by design DLL in 65 nm CMOS fabrication process. The proposed DLL uses a lock detector to avoid the lock error and phase error in SET(Single-event Transient) response. The simulation results demonstrate that the proposed DLL can generate quadrature phase clock in a 500 MHz with high reliability and the SET threshold is better than 100 MeV · cm2/mg, has great stability in space.
出处 《微电子学与计算机》 CSCD 北大核心 2017年第9期77-81,共5页 Microelectronics & Computer
关键词 延迟锁相环 电荷泵 SET加固 锁定检测结构 delay locked loop charge pump SET-tolerate lock detector
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