摘要
为了探求晶体方向对超精密切削后的硅表面纳米级粗糙度的影响,找出最佳切削方向。提出了一种利用均值分布图和欧式距离分析相结合的分析方法。首先利用单点金刚石刀具切削单晶硅获得纳米级粗糙度的表面,然后利用Talysurf CCI 6000型白光干涉仪测量得到多点的粗糙度数值,再采用箱图对测量数据进行了预处理,找到异常值,最后利用粗糙度均值分布图和欧式距离分析了晶向对粗糙度的影响。分析结果表明:利用单点金刚石刀具切削加工单晶硅,进给量和切削深度等切削参数以及单晶硅的晶体方向对加工表面的粗糙度有影响。
To understand the influence of crystal directions on manufactured surface roughness of different crystal silicons in ultra-precision turning clearly and find the optimal cutting directions,a novel approach to analyze surface roughness using surface roughness distributions and Euclidean Distance was provided in this paper.There are several steps to conduct to study the surface roughness as follows in this paper.Firstly,the surface roughness of a monocrystalline silicon wafer was manufactured by a single point diamond cutting tool with different cutting parameters in different cutting areas.Then the values of surface roughness of the silicon wafer were obtained using a white light interferometer Talysurf CCI 6000.After that,the measured surface roughness data were pretreated with boxplots analysis,in order to find and get rid of the influence of the outliers.Finally,the roughness values along different crystal orientations of the manufactured wafer were analyzed using mean roughness value analysis and Euclidean Distance table.It shows that the crystal orientations and cutting parameters have much influence on surface roughness.
作者
张士军
ZHANG Shijun(School of Mechanical and Electronical Engineering,Shandong Jianzhu University,Jinan 250101,CHN)
出处
《制造技术与机床》
北大核心
2020年第12期82-86,共5页
Manufacturing Technology & Machine Tool
基金
山东建筑大学博士基金(XNBS1017)。
关键词
超精密加工
表面粗糙度
单晶硅
纳米
晶向
ultra-precision machining
surface roughness
monocrystalline silicon
nanometer
crystal orientations
