摘要
在集成电路制造中,双大马士革技术已经被广泛应用于铜互连工艺中,其中采用了化学机械抛光(CMP)技术去除在布线时电镀阶段形成的多余铜,为下面的多层金属化结构提供一个平坦的表面。CMP将化学作用和机械作用相结合,是获得晶圆局部和全局平坦化的唯一可靠技术。抛光液作为CMP工艺中最重要的耗材之一,其性能的好坏直接决定晶圆的抛光效果和良品率。本文回顾了近年来国内外开发的各种新型铜抛光液,归纳总结表明铜抛光液正在朝着弱碱性、绿色环保、一剂多用和复配协同作用的方向发展。此外,展望了铜抛光液未来的重点研究方向。
For integrated circuit manufacture,dual damascene technique has been applied to copper interconnection process,in which chemical mechanical polishing(CMP)is used to remove extra copper film formed in copper electroplating and provide a planar surface for the next multi-level metallization.CMP is a uniquely reliable technique to achieve global and local planarization of wafer surface in integrated circuits manufacturing,which combines chemical action and mechanical action.Polishing slurry is one of the most important consumables in CMP process,and its performance directly determines the polishing results and yield of wafer.This article reviews the novel copper polishing slurries developed at home and abroad in recent years.It can be concluded that copper polishing slurry is developing towards the direction of weak alkalinity,environment-friendly,multi-use of one reagent and the synergistic effects of different components.Finally,the future research directions are prospected.
作者
周佳凯
牛新环
杨程辉
王治
崔雅琪
ZHOU Jiakai;NIU Xinhuan;YANG Chenghui;WANG Zhi;CUI Yaqi(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2020年第9期12-18,共7页
Electronic Components And Materials
基金
国家科技重大专项(02专项)(2016ZX02301003-004_007)
天津市自然科学基金(16JCYBJC16100,18JCTPJC57000)。
关键词
铜互连
化学机械抛光
综述
抛光液
发展方向
copper interconnection
chemical mechanical polishing
review
polishing slurry
development trend
