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Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters

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摘要 It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters.We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement.Photoluminescence characteristics under open circuit and connected circuit conditions are also studied.It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency.In addition,series resistance of photovoltaic power converters impairs the efficiency especially at high input powers.Both the key factors need to be considered to obtain high efficiency,and this work provides promising guidance on designing photovoltaic power converters.
作者 Wen-Xue Huo Ming-Long Zhao Xian-Sheng Tang Li-Li Han Zhen Deng Yang Jiang Wen-Xin Wang Hong Chen Chun-Hua Du Hai-Qiang Jia 霍雯雪;赵明龙;唐先胜;韩丽丽;邓震;江洋;王文新;陈弘;杜春花;贾海强(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;The Yangtze River Delta Physics Research Center,Liyang 213300,China)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第8期162-166,共5页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China(Grant Nos.61704008 and 11574362) the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB33000000).
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