摘要
采用银金属辅助化学腐蚀技术在多晶硅衬底上制备了黑硅绒面,通过能谱仪、扫描电子显微镜和反射率测试仪对所制备黑硅样品的表面银金属残留、形貌和光吸收进行了表征和分析。在此基础之上,通过扩散、腐蚀清洗、镀膜和印刷烧结测试等工序,将多晶黑硅样品制备成太阳电池片,并通过I-V和EL测试仪对其光伏性能和电致发光特性进行了测量和分析。结果表明,与无银残留样品规则、均匀的圆形腐蚀坑绒面相比,黑硅制备过程中如果有银离子残留在表面,扩孔后的表面形貌呈现为方向杂乱和深浅不一的凹坑状形貌,且凹坑周围边界尖锐、形状不规则,制备成电池后转换效率偏低3.03%。
Black silicon with textured surface was prepared on mc-Si by metal assisted chemical etching(MACE)technique using Ag element.The surface Ag residues,morphology and optical absorption of the prepared black silicon samples were characterized and analyzed by energy dispersive spectrometer,scanning electron microscope and reflectivity tester.On this basis,solar cells were fabricated with the black silicon samples with standard processes of diffusion,etching,PECVD coating,screen printing and sintering.And their electrical and electroluminecence(EL)properties were characterized and analyzed by I-V and EL test.The results show that compared with the regular and uniform circular texture surface without Ag residues,the surface morphology of black silicon samples with Ag residues was disorderly in direction and different in depth.The efficiency of the related solar cell was 3.03% lower than that of the normal cell due to the sharp boundary around the pit and the irregular shape.
作者
黄钩林
范维涛
张鑫
程晶
沈鸿烈
HUANG Junlin;FAN Weitao;ZHANG Xin;CHENG Jing;SHEN Honglie(College of Materials Science&Technology,Nanjing University of Aeronautics&Astronautics,Nanjing 210016,CHN;WKC(Suzhou)Energy Technol.Co.Ltd.,Suzhou 215121,CHN)
出处
《半导体光电》
CAS
北大核心
2020年第4期509-512,共4页
Semiconductor Optoelectronics
