摘要
Electron energy relaxation timeτis one of the key physical parameters for electronic materials.In this study,we develop a new technique to measureτin a semiconductor via monochrome picosecond(ps)terahertz(THz)pump and probe experiment.The special THz pulse structure of Chinese THz free-electron laser(CTFEL)is utilized to realize such a technique,which can be applied to the investigation into THz dynamics of electronic and optoelectronic materials and devices.We measure the THz dynamical electronic properties of high-mobility n-GaSb wafer at 1.2 THz,1.6 THz,and 2.4 THz at room temperature and in free space.The obtained electron energy relaxation time for n-GaSb is in line with that measured via,e.g.,four-wave mixing techniques.The major advantages of monochrome ps THz pump-probe in the study of electronic and optoelectronic materials are discussed in comparison with other ultrafast optoelectronic techniques.This work is relevant to the application of pulsed THz free-electron lasers and also to the development of advanced ultrafast measurement technique for the investigation of dynamical properties of electronic and optoelectronic materials.
作者
hao Wang
Wen Xu
Hong-Ying Mei
Hua Qin
Xin-Nian Zhao
Hua Wen
Chao Zhang
Lan Ding
Yong Xu
Peng Li
Dai Wu
Ming Li
王超;徐文;梅红樱;秦华;赵昕念;温华;张超;丁岚;徐勇;李鹏;吴岱;黎明(Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China;University of Science and Technology of China,Hefei 230026,China;School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information,Yunnan University,Kunming 650091,China;Faculty of Information Engineering,Huanghuai University,Zhumadian 463000,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Institute of Applied Electronics,Chinese Academy of Engineering Physics,Mianyang 621900,China)
基金
the National Natural Science Foundation of China(Grant Nos.U1930116,U1832153,and 11574319)
the Fund from the Center of Science and Technology of Hefei Academy of Sciences,China(Grant No.2016FXZY002)。
