摘要
为了研究氮化镓刻蚀倾角、选择性和形貌与刻蚀参数之间的关系,对氮化镓的干法刻蚀工艺进行了优化。通过研究不同掩膜种类下的选择比、刻蚀形貌,记录了自偏压,测量了刻蚀速率。通过改变包括气体流量、不同气体比例、射频功率、温度、自偏压等干法刻蚀工艺参数,研究了倾斜侧壁氮化镓的刻蚀工艺。结果表明,采用氯基气体可以对氮化镓材料进行刻蚀,刻蚀侧壁及底部形貌光滑;采用氧化硅做掩膜可以获得垂直的侧壁形貌;增大钝化气体比例可以获得倾斜侧壁的氮化镓刻蚀形貌。
In order to study the relationship between the inclination angle,selectivity and morphology of etched GaN and etching parameters,the dry etching process of GaN is optimized. By studying the selection ratio and etch morphology under different mask types,the self-bias voltage is recorded and the etch rate is measured. By changing the dry etching process parameters including gas flow rate,ratio of different gases,RF power,temperature,and self-bias voltage,the etching process of GaN with inclined sidewalls is studied. The results show that the chlorine-based gases can etch the gallium nitride material,and the etching morphology of both sidewall and bottom is smooth;the silicon dioxide is used as a mask to obtain the vertical sidewall. Increasing the proportion of passivation gas can obtain the gallium nitride etching morphology of the inclined sidewall.
作者
李攀
卢宏
LI Pan;LU Hong(Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China)
出处
《实验室研究与探索》
CAS
北大核心
2020年第6期19-21,31,共4页
Research and Exploration In Laboratory
基金
国家自然科学基金资助项目(61974047)。
关键词
半导体材料
感应耦合等离子
干法刻蚀
氮化镓
semiconductor material
inductively coupled plasma(ICP)
dry etching
GaN
