摘要
采用干法刻蚀和湿法腐蚀工艺刻蚀单晶〈002〉晶向AlN薄膜。干法刻蚀中采用电感耦合等离子体(ICP)设备在不同功率和腔压等工艺参数以及不同气体体积流量下刻蚀单晶〈002〉晶向AlN薄膜,通过比较几种刻蚀结果得出在ICP射频(RF)功率为100 W、ICP线圈功率为500 W、偏置电压为-400^-100 V、腔内压强为4 mTorr(1 Torr=133 Pa)以及BCl3、Cl2和Ar的体积流量分别为50、70和30 cm^3/min的工艺参数下刻蚀单晶〈002〉晶向AlN薄膜,得到刻蚀速率均匀及侧壁垂直度较好的刻蚀形貌,采用场发射扫描电子显微镜(FESEM)测试刻蚀后AlN薄膜的平均表面粗糙度(≤20 nm)良好。湿法腐蚀中采用质量分数为10%的KOH溶液在不同温度下腐蚀AlN薄膜,得出刻蚀速率随着温度的升高而增加,腐蚀速率均匀性一般,平均表面粗糙度(<150 nm)也较差。通过比较两种工艺得出干法刻蚀更适合AlN薄膜的图案化。
AlN thin films with single crystal〈002〉direction were etched by the dry etching and wet etching processes.In dry etching,the AlN thin films with single crystal〈002〉direction were etched by the inductively coupled plasma(ICP)equipment under different powers,cavity pressures and different gas volume flows.The AlN thin films with single crystal〈002〉direction were etched under the process parameters of the ICP radio-frequency(RF)power of 100 W,ICP coil power of 500 W,bias voltage from-400 to-100 V,cavity pressure of 4 mTorr(1 Torr=133 Pa)and BCl3,Cl2 and Ar volume flows of 50,70 and 30 cm^3/min,respectively.By comparing several etching results,it is obtained that under these conditions,the etching rate is uniform and the etching morphology of the side wall perpendicularity is better.The field emission scanning electron microscope(FESEM)result shows that the mean surface roughness(≤20 nm)of AlN thin films after etching is good.In wet etching,AlN thin films were etched with KOH solution of 10%mass fraction at different temperatures.It is found that the etching rate increases with the increase of temperature,the etching rate uniformity is general,and the mean surface roughness(less than 150 nm)is worse.By comparing the two etching processes,it is showed that the dry etching is more suitable for the patterning of AlN thin films.
作者
赵龙
王强
薛晨阳
Zhao Long;Wang Qiang;Xue Chenyang(Key Laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education,North University of China,Taiyuan 030051,China;Shanxi Provincial Key Laboratory of Dynamic Testing Technology,Taiyuan 030051,China)
出处
《微纳电子技术》
北大核心
2020年第7期550-555,共6页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61525107)。
