摘要
空间微重力环境为理解被地面重力场掩盖的晶体生长现象与规律、探索新的晶体制备工艺提供了独一无二的平台.我国学者在过去的30多年里进行了Ⅲ-Ⅴ族半导体晶体的空间生长研究,主要进展有:在微重力条件下得到了器件级的半绝缘GaAs,基于其制备的低噪声场效应晶体管和模拟开关集成电路性能明显超过地基器件;通过抑制熔体静压力的作用,实现了GaSb及InSb两种材料的非接触Bridgman生长,并大幅降低了材料的位错密度;深入研究了浮力对流、Marangoni对流及旋转磁场驱动的强制对流对组分微观偏析的影响规律;将垂直梯度凝固法应用于半导体合金生长,获得了组分均匀分布的GaInSb材料.本综述回顾了以上方面的研究进展,并对半导体空间材料科学的未来挑战进行了展望.
The low-gravity environment aboard the space provides a unique platform for both understanding the crystal-growthrelated phenomena that are masked by gravity on the earth and exploring new crystal growth techniques. Ⅲ-Ⅴ semiconductor crystal growths were carried out under microgravity and the main results include: device-grade semiinsulating Ga As single crystal with improved stoichiometry was grown under microgravity condition, and low noise field-effect transistors and analog switch integrated circuits were fabricated and the performances were better than their terrestrial counterparts;detached Bridgman growth was realized in two model systems of Ga Sb and In Sb by suppressing the hydrostatic pressure of melt, and largely reduced dislocation densities in the materials were observed;the contributions of buoyancy-driven convection, Marangoni convection and rotation magnetic field forced convection on the microscopic segregation were carefully studied;the vertical gradient freezing method was employed to grow semiconductor alloys and chemically homogeneous Ga In Sb crystal was obtained. In this review, the main progresses in these aspects are summarized and the future challenges are discussed.
作者
尹志岗
张兴旺
吴金良
YIN ZhiGang;ZHANG XingWang;WU JinLiang(Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《中国科学：物理学、力学、天文学》
CSCD
北大核心
2020年第4期62-74,共13页
Scientia Sinica Physica,Mechanica & Astronomica
基金
中国载人空间站工程(编号:TGJZ800-2-RW024)
国家自然科学基金(编号:U1738114)
中国科学院空间科学战略性先导科技专项(编号:XDA15051200)资助项目。
