摘要
设计了一种温度不灵敏的高线性度的射频功率放大器芯片,采用新颖的带温度反馈环路的有源片上自适应偏置电路,该电路降低了温度引起的放大器集电极直流电流分量的变化量,补偿了由温度变化而引起的性能偏差,进而有效提高了放大器的线性度。基于这个温度不灵敏的偏置结构采用InGaP/GaAs HBT工艺设计了一个工作在2110~2170 MHz频段的功率放大器。测试结果表明,该功放在工作频段内的增益大于等于35.3 dB;在中心频率2140 MHz处,1 dB功率压缩点大于33 dBm,功率附加效率在输出功率24.5 dBm时为18%;使用LTE_FDD调制信号,获得邻信道功率比为-47 dBc。在环境温度为-40℃、+25℃和+80℃条件下,功放的增益平坦度较好,增益变化量小于1.5 dB,输出级集电极电流基本不变,有效降低了功放对温度的敏感性。
A temperature-insensitive high linearity RF power amplifier was proposed.A novel ac tive on-chip adaptive bias circuit with a temperature feedback loop was used,which reduced the varia tion of DC current component in collector of the amplifier caused by temperature,compensated the temperature-induced performance deviation,and thus contributed to the linearity performance of the amplifier.The presented power amplifier is designed with InGaP/GaAs HBT technology and operates from 2110 to 2170 MHz.The power amplifier shows a measured gain of greater than or equal to 35.3 dB in the operation frequency band.At the center frequency of 2140 MHz,the 1 dB power compres sion point is 33 dBm,and the power added efficiency(PAE)is 18%under an output power of 24.5 dBm.An adjacent channel power ratio(ACPR)of-47 dBc is achieved with the input of the LTE_FDD modulated signal.Besides,at ambient temperature of-40℃,+25℃and+80℃,the gain variations are less than 1.5 dB and the output stage collector current is basically unchanged,which effectively reduces the temperature sensitivity of the power amplifier.
作者
蓝焕青
张志浩
曾凡杰
李嘉进
章国豪
LAN Huanqing;ZHANG Zhihao;ZENG Fanjie;LI Jiajin;ZHANG Guohao(School of Information,Guangdong University of Technology,Guangzhou,510000,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2020年第1期7-11,22,共6页
Research & Progress of SSE
基金
国家自然科学基金资助项目(61574049)。
