摘要
设计了单层MoS2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)异质结太阳能电池结构,采用AFORS-HET模拟软件模拟了背场层的带隙、掺杂浓度和缺陷密度等参数对开路电压、短路电流、填充因子和转化效率的影响。结果显示,背场层带隙在1.5~1.7 eV之间,背场层的掺杂浓度大于1×10^18 cm^-3时,该结构的太阳能电池有比较稳定的表现。缺陷密度增加时,太阳能电池效率随着缺陷密度的对数线性减小,当控制缺陷密度在10^11 cm^-3以下时,可以获得大于24.10%的转化效率,缺陷密度为10^9 cm^-3时,可以获得最高29.08%的转换效率。最后研究了背场层对该结构太阳能电池的作用,结果显示有效控制缺陷密度时,背场层的添加对电池效率的提升很明显。
A single-layer MoS2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)heterojunction solar cell structure was designed,and the back field′s band gap,doping concentration and defect density of the layers on open circuit voltage,short circuit current,fill factor and conversion efficiency was simulated using AFORS-HET software.The results show that the back-surface field band gap is between 1.5-1.7 eV,and the back-surface field doping concentration is greater than 1×10^18 cm^-3,the solar cell of this structure has a relatively stable performance.As the defect density increases,the solar cell efficiency decreases linearly with the logarithm of the defect density.When the defect density is controlled below 10^11 cm^-3,a conversion efficiency greater than 24.10%can be obtained,and when the defect density is 10^9 cm^-3,the highest conversion efficiency 29.08%can be obtained.Finally,the effect of the back-surface field layer on the structure of the solar cell is studied.The results show that when the defect density is effectively controlled,the addition of the back-surface field improves the cell efficiency significantly.
作者
罗伟
姜鑫
梁世豪
杜锐
LUO Wei;JIANG Xin;LIANG Shihao;DU Rui(College of Electronic Science, Northeast Petroleum University, Daqing 163318, China;University-Enterprise R&D Center of Measuring and Testing Technology & Instrument and Meter Engineering in Heilongjiang Province, Daqing 163318, China)
出处
《人工晶体学报》
EI
CAS
北大核心
2020年第3期422-427,共6页
Journal of Synthetic Crystals
基金
黑龙江省高等教育教学改革一般研究项目(SJGY20190100)。
